Application of Maximum Entropy Method to Semiconductor Engineering

The maximum entropy method (MEM) is widely used in research fields such as linguistics, meteorology, physics, and chemistry. Recently, MEM application has become a subject of interest in the semiconductor engineering field, in which devices utilize very thin films composed of many materials. For thi...

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Main Author: Yoshiki Yonamoto
Format: Article
Language:English
Published: MDPI AG 2013-05-01
Series:Entropy
Subjects:
Online Access:http://www.mdpi.com/1099-4300/15/5/1663
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author Yoshiki Yonamoto
author_facet Yoshiki Yonamoto
author_sort Yoshiki Yonamoto
collection DOAJ
description The maximum entropy method (MEM) is widely used in research fields such as linguistics, meteorology, physics, and chemistry. Recently, MEM application has become a subject of interest in the semiconductor engineering field, in which devices utilize very thin films composed of many materials. For thin film fabrication, it is essential to thoroughly understand atomic-scale structures, internal fixed charges, and bulk/interface traps, and many experimental techniques have been developed for evaluating these. However, the difficulty in interpreting the data they provide prevents the improvement of device fabrication processes. As a candidate for a very practical data analyzing technique, MEM is a promising approach to solve this problem. In this paper, we review the application of MEM to thin films used in semiconductor engineering. The method provides interesting and important information that cannot be obtained with conventional methods. This paper explains its theoretical background, important points for practical use, and application results.
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spelling doaj.art-37bb53d2bf1a4ecca4d23e63380e34f22022-12-22T04:23:25ZengMDPI AGEntropy1099-43002013-05-011551663168910.3390/e15051663Application of Maximum Entropy Method to Semiconductor EngineeringYoshiki YonamotoThe maximum entropy method (MEM) is widely used in research fields such as linguistics, meteorology, physics, and chemistry. Recently, MEM application has become a subject of interest in the semiconductor engineering field, in which devices utilize very thin films composed of many materials. For thin film fabrication, it is essential to thoroughly understand atomic-scale structures, internal fixed charges, and bulk/interface traps, and many experimental techniques have been developed for evaluating these. However, the difficulty in interpreting the data they provide prevents the improvement of device fabrication processes. As a candidate for a very practical data analyzing technique, MEM is a promising approach to solve this problem. In this paper, we review the application of MEM to thin films used in semiconductor engineering. The method provides interesting and important information that cannot be obtained with conventional methods. This paper explains its theoretical background, important points for practical use, and application results.http://www.mdpi.com/1099-4300/15/5/1663maximum entropy methodsemiconductor engineeringfilm structurefixed chargetrap
spellingShingle Yoshiki Yonamoto
Application of Maximum Entropy Method to Semiconductor Engineering
Entropy
maximum entropy method
semiconductor engineering
film structure
fixed charge
trap
title Application of Maximum Entropy Method to Semiconductor Engineering
title_full Application of Maximum Entropy Method to Semiconductor Engineering
title_fullStr Application of Maximum Entropy Method to Semiconductor Engineering
title_full_unstemmed Application of Maximum Entropy Method to Semiconductor Engineering
title_short Application of Maximum Entropy Method to Semiconductor Engineering
title_sort application of maximum entropy method to semiconductor engineering
topic maximum entropy method
semiconductor engineering
film structure
fixed charge
trap
url http://www.mdpi.com/1099-4300/15/5/1663
work_keys_str_mv AT yoshikiyonamoto applicationofmaximumentropymethodtosemiconductorengineering