The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser
In laser processing, due to the short interaction time between an ultrashort pulse laser and silicon, it has been difficult to study the lattice temperature change characteristics of silicon. In this paper, the interaction between a picosecond laser and silicon was studied. Based on the Fokker–Planc...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-07-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/7/1119 |
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| author | Jianjun Yang Decheng Zhang Jinye Wei Lingling Shui Xinjin Pan Guangren Lin Tiande Sun Yicheng Tang |
| author_facet | Jianjun Yang Decheng Zhang Jinye Wei Lingling Shui Xinjin Pan Guangren Lin Tiande Sun Yicheng Tang |
| author_sort | Jianjun Yang |
| collection | DOAJ |
| description | In laser processing, due to the short interaction time between an ultrashort pulse laser and silicon, it has been difficult to study the lattice temperature change characteristics of silicon. In this paper, the interaction between a picosecond laser and silicon was studied. Based on the Fokker–Planck equation and two-temperature model (TTM) equation, a simulation model of silicon heating by different pulse-width picosecond lasers was established. The results show that within the range of 15 to 5 ps, the maximum lattice temperature tended to increase first and then decrease with the decreasing pulse width. The watershed was around 7.5 ps. The model error was less than 3.2% when the pulse width was 15 ps and the single pulse energy was 25 μJ. |
| first_indexed | 2024-03-09T06:11:23Z |
| format | Article |
| id | doaj.art-37d1b4c5f39548abaa5df625d0c4b956 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T06:11:23Z |
| publishDate | 2022-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-37d1b4c5f39548abaa5df625d0c4b9562023-12-03T11:58:09ZengMDPI AGMicromachines2072-666X2022-07-01137111910.3390/mi13071119The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond LaserJianjun Yang0Decheng Zhang1Jinye Wei2Lingling Shui3Xinjin Pan4Guangren Lin5Tiande Sun6Yicheng Tang7Zhongshan Institute, College of Electron and Information, University of Electronic Science and Technology of China, Zhongshan 528402, ChinaZhongshan Institute, College of Electron and Information, University of Electronic Science and Technology of China, Zhongshan 528402, ChinaZhongshan Institute, College of Electron and Information, University of Electronic Science and Technology of China, Zhongshan 528402, ChinaSouth China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaZhongshan Institute, College of Electron and Information, University of Electronic Science and Technology of China, Zhongshan 528402, ChinaGuangdong Huakuai Photonics Technology Co., Ltd., Zhongshan 528400, ChinaGuangdong Huakuai Photonics Technology Co., Ltd., Zhongshan 528400, ChinaGuangdong Huakuai Photonics Technology Co., Ltd., Zhongshan 528400, ChinaIn laser processing, due to the short interaction time between an ultrashort pulse laser and silicon, it has been difficult to study the lattice temperature change characteristics of silicon. In this paper, the interaction between a picosecond laser and silicon was studied. Based on the Fokker–Planck equation and two-temperature model (TTM) equation, a simulation model of silicon heating by different pulse-width picosecond lasers was established. The results show that within the range of 15 to 5 ps, the maximum lattice temperature tended to increase first and then decrease with the decreasing pulse width. The watershed was around 7.5 ps. The model error was less than 3.2% when the pulse width was 15 ps and the single pulse energy was 25 μJ.https://www.mdpi.com/2072-666X/13/7/1119pulse widthpicosecond lasersiliconlattice temperature |
| spellingShingle | Jianjun Yang Decheng Zhang Jinye Wei Lingling Shui Xinjin Pan Guangren Lin Tiande Sun Yicheng Tang The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser Micromachines pulse width picosecond laser silicon lattice temperature |
| title | The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser |
| title_full | The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser |
| title_fullStr | The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser |
| title_full_unstemmed | The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser |
| title_short | The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser |
| title_sort | effect of different pulse widths on lattice temperature variation of silicon under the action of a picosecond laser |
| topic | pulse width picosecond laser silicon lattice temperature |
| url | https://www.mdpi.com/2072-666X/13/7/1119 |
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