Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency
Abstract This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2017-07-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2218-2 |
| _version_ | 1797726915093594112 |
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| author | Maher Ezzedini Tarek Hidouri Mohamed Helmi Hadj Alouane Amor Sayari Elsayed Shalaan Nicolas Chauvin Larbi Sfaxi Faouzi Saidi Ahmed Al-Ghamdi Catherine Bru-Chevallier Hassen Maaref |
| author_facet | Maher Ezzedini Tarek Hidouri Mohamed Helmi Hadj Alouane Amor Sayari Elsayed Shalaan Nicolas Chauvin Larbi Sfaxi Faouzi Saidi Ahmed Al-Ghamdi Catherine Bru-Chevallier Hassen Maaref |
| author_sort | Maher Ezzedini |
| collection | DOAJ |
| description | Abstract This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-source molecular beam epitaxy (SS-MBE) and investigated via photoluminescence (PL), spectroscopic ellipsometry (SE), and picosecond time-resolved photoluminescence. Distinctive double-emission peaks are observed in the PL spectra of the sample. From the excitation power-dependent and temperature-dependent PL measurements, these emission peaks are associated with the ground-state transition from InAs QDs with two different size populations. Luminescence measurements were carried out as function of temperature in the range of 10–300 K by the PL technique. The low temperature PL has shown an abnormal emission which appeared at the low energy side and is attributed to the recombination through the deep levels. The PL peak energy presents an anomalous behavior as a result of the competition process between localized and delocalized carriers. We propose the localized-state ensemble model to explain the usual photoluminescence behaviors. The quantitative study shows that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers. We have determined the localization depth and its effect on the application of the investigated heterostructure for photovoltaic cells. The model gives an overview to a possible amelioration of the InAs/InGaAs/GaAs QDs SCs properties based on the theoretical calculations. |
| first_indexed | 2024-03-12T10:52:18Z |
| format | Article |
| id | doaj.art-37d97fda8ba847d3a496f8a0f5fcdcad |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T10:52:18Z |
| publishDate | 2017-07-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-37d97fda8ba847d3a496f8a0f5fcdcad2023-09-02T06:47:29ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-07-0112111010.1186/s11671-017-2218-2Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic EfficiencyMaher Ezzedini0Tarek Hidouri1Mohamed Helmi Hadj Alouane2Amor Sayari3Elsayed Shalaan4Nicolas Chauvin5Larbi Sfaxi6Faouzi Saidi7Ahmed Al-Ghamdi8Catherine Bru-Chevallier9Hassen Maaref10Université de Monastir, Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Faculté des SciencesUniversité de Monastir, Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Faculté des SciencesInstitut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-LyonDepartment of Physics, Faculty of Science, King Abdulaziz UniversityDepartment of Physics, Faculty of Science, King Abdulaziz UniversityInstitut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-LyonUniversité de Monastir, Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Faculté des SciencesUniversité de Monastir, Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Faculté des SciencesDepartment of Physics, Faculty of Science, King Abdulaziz UniversityInstitut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-LyonUniversité de Monastir, Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Faculté des SciencesAbstract This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-source molecular beam epitaxy (SS-MBE) and investigated via photoluminescence (PL), spectroscopic ellipsometry (SE), and picosecond time-resolved photoluminescence. Distinctive double-emission peaks are observed in the PL spectra of the sample. From the excitation power-dependent and temperature-dependent PL measurements, these emission peaks are associated with the ground-state transition from InAs QDs with two different size populations. Luminescence measurements were carried out as function of temperature in the range of 10–300 K by the PL technique. The low temperature PL has shown an abnormal emission which appeared at the low energy side and is attributed to the recombination through the deep levels. The PL peak energy presents an anomalous behavior as a result of the competition process between localized and delocalized carriers. We propose the localized-state ensemble model to explain the usual photoluminescence behaviors. The quantitative study shows that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers. We have determined the localization depth and its effect on the application of the investigated heterostructure for photovoltaic cells. The model gives an overview to a possible amelioration of the InAs/InGaAs/GaAs QDs SCs properties based on the theoretical calculations.http://link.springer.com/article/10.1186/s11671-017-2218-2InAs quantum dotsMolecular beam epitaxyOptical transitionsPhotoluminescencePicosecond time-resolved photoluminescenceSpectroscopic ellipsometry |
| spellingShingle | Maher Ezzedini Tarek Hidouri Mohamed Helmi Hadj Alouane Amor Sayari Elsayed Shalaan Nicolas Chauvin Larbi Sfaxi Faouzi Saidi Ahmed Al-Ghamdi Catherine Bru-Chevallier Hassen Maaref Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency Nanoscale Research Letters InAs quantum dots Molecular beam epitaxy Optical transitions Photoluminescence Picosecond time-resolved photoluminescence Spectroscopic ellipsometry |
| title | Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency |
| title_full | Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency |
| title_fullStr | Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency |
| title_full_unstemmed | Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency |
| title_short | Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency |
| title_sort | detecting spatially localized exciton in self organized inas ingaas quantum dot superlattices a way to improve the photovoltaic efficiency |
| topic | InAs quantum dots Molecular beam epitaxy Optical transitions Photoluminescence Picosecond time-resolved photoluminescence Spectroscopic ellipsometry |
| url | http://link.springer.com/article/10.1186/s11671-017-2218-2 |
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