Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

Abstract This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-...

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Bibliographic Details
Main Authors: Maher Ezzedini, Tarek Hidouri, Mohamed Helmi Hadj Alouane, Amor Sayari, Elsayed Shalaan, Nicolas Chauvin, Larbi Sfaxi, Faouzi Saidi, Ahmed Al-Ghamdi, Catherine Bru-Chevallier, Hassen Maaref
Format: Article
Language:English
Published: SpringerOpen 2017-07-01
Series:Nanoscale Research Letters
Subjects:
InAs quantum dots
Molecular beam epitaxy
Optical transitions
Photoluminescence
Picosecond time-resolved photoluminescence
Spectroscopic ellipsometry
Online Access:http://link.springer.com/article/10.1186/s11671-017-2218-2

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