Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells

Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells

Recent experiments have shown that more than 85% of photo-generated carriers can escape from multiple quantum wells (MQWs) sandwiched between p-type and n-type layers (PIN). In this work, we quantitatively analyze the relationship between the energy of carriers and the height of potential barriers t...

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Bibliographic Details
Main Authors: Jiaping Guo, Weiye Liu, Ding Ding, Xinhui Tan, Wei Zhang, Lili Han, Zhaowei Wang, Weihua Gong, Jiyun Li, Ruizhan Zhai, Zhongqing Jia, Ziguang Ma, Chunhua Du, Haiqiang Jia, Xiansheng Tang
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Crystals
Subjects:
photo-generated carriers
escape
uncertainty principle
Online Access:https://www.mdpi.com/2073-4352/13/5/834

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