Enhanced Infrared Absorbance of the CMOS Compatible Thermopile by the Subwavelength Rectangular-Hole Arrays
The enhanced infrared absorbance (IRA) of the complementary metal-oxide-semiconductor (CMOS) compatible thermopile with the subwavelength rectangular-hole arrays in active area is investigated. The finite-difference time-domain (FDTD) method considered and analyzed the matrix arrangement (MA) and st...
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| Format: | Article |
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MDPI AG
2020-06-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/20/11/3218 |
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| author | Chi-Feng Chen Chih-Hsiung Shen Yun-Ying Yeh |
| author_facet | Chi-Feng Chen Chih-Hsiung Shen Yun-Ying Yeh |
| author_sort | Chi-Feng Chen |
| collection | DOAJ |
| description | The enhanced infrared absorbance (IRA) of the complementary metal-oxide-semiconductor (CMOS) compatible thermopile with the subwavelength rectangular-hole arrays in active area is investigated. The finite-difference time-domain (FDTD) method considered and analyzed the matrix arrangement (MA) and staggered arrangement (SA) of subwavelength rectangular-hole arrays (SRHA). For the better cases of MA-SRHA and SA-SRHA, the geometric parameters are the same and the infrared absorption efficiency (IAE) of the SA type is better than that of the MA type by about 19.4% at target temperature of 60 °C. Three proposed thermopiles with SA-SRHA are manufactured based on the 0.35 μm 2P4M CMOS-MEMS process. The measurement results are similar to the simulation results. The IAE of the best simulation case of SA-SRHA is up to 3.3 times higher than that without structure at the target temperature of 60 °C. Obviously, the staggered rectangular-hole arrays with more appropriate geometric conditions obtained from FDTD simulation can excellently enhance the IRA of the CMOS compatible thermopile. |
| first_indexed | 2024-03-10T19:20:39Z |
| format | Article |
| id | doaj.art-37f29271adba4bcc8aeea1c6fe1bb21d |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-10T19:20:39Z |
| publishDate | 2020-06-01 |
| publisher | MDPI AG |
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| series | Sensors |
| spelling | doaj.art-37f29271adba4bcc8aeea1c6fe1bb21d2023-11-20T02:59:45ZengMDPI AGSensors1424-82202020-06-012011321810.3390/s20113218Enhanced Infrared Absorbance of the CMOS Compatible Thermopile by the Subwavelength Rectangular-Hole ArraysChi-Feng Chen0Chih-Hsiung Shen1Yun-Ying Yeh2Department of Mechanical Engineering, National Central University, Taoyuan City 32001, TaiwanDepartment of Mechatronics Engineering, National Changhua University of Education, Changhua City 50007, TaiwanDepartment of Mechanical Engineering, National Central University, Taoyuan City 32001, TaiwanThe enhanced infrared absorbance (IRA) of the complementary metal-oxide-semiconductor (CMOS) compatible thermopile with the subwavelength rectangular-hole arrays in active area is investigated. The finite-difference time-domain (FDTD) method considered and analyzed the matrix arrangement (MA) and staggered arrangement (SA) of subwavelength rectangular-hole arrays (SRHA). For the better cases of MA-SRHA and SA-SRHA, the geometric parameters are the same and the infrared absorption efficiency (IAE) of the SA type is better than that of the MA type by about 19.4% at target temperature of 60 °C. Three proposed thermopiles with SA-SRHA are manufactured based on the 0.35 μm 2P4M CMOS-MEMS process. The measurement results are similar to the simulation results. The IAE of the best simulation case of SA-SRHA is up to 3.3 times higher than that without structure at the target temperature of 60 °C. Obviously, the staggered rectangular-hole arrays with more appropriate geometric conditions obtained from FDTD simulation can excellently enhance the IRA of the CMOS compatible thermopile.https://www.mdpi.com/1424-8220/20/11/3218subwavelengthsubwavelength hole arrayssubwavelength rectangular-hole arraysthermopileCMOS-MEMSinfrared radiation |
| spellingShingle | Chi-Feng Chen Chih-Hsiung Shen Yun-Ying Yeh Enhanced Infrared Absorbance of the CMOS Compatible Thermopile by the Subwavelength Rectangular-Hole Arrays Sensors subwavelength subwavelength hole arrays subwavelength rectangular-hole arrays thermopile CMOS-MEMS infrared radiation |
| title | Enhanced Infrared Absorbance of the CMOS Compatible Thermopile by the Subwavelength Rectangular-Hole Arrays |
| title_full | Enhanced Infrared Absorbance of the CMOS Compatible Thermopile by the Subwavelength Rectangular-Hole Arrays |
| title_fullStr | Enhanced Infrared Absorbance of the CMOS Compatible Thermopile by the Subwavelength Rectangular-Hole Arrays |
| title_full_unstemmed | Enhanced Infrared Absorbance of the CMOS Compatible Thermopile by the Subwavelength Rectangular-Hole Arrays |
| title_short | Enhanced Infrared Absorbance of the CMOS Compatible Thermopile by the Subwavelength Rectangular-Hole Arrays |
| title_sort | enhanced infrared absorbance of the cmos compatible thermopile by the subwavelength rectangular hole arrays |
| topic | subwavelength subwavelength hole arrays subwavelength rectangular-hole arrays thermopile CMOS-MEMS infrared radiation |
| url | https://www.mdpi.com/1424-8220/20/11/3218 |
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