Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications
Solution-grown indium oxide (In<sub>2</sub>O<sub>3</sub>) based thin-film transistors (TFTs) hold good prospects for emerging advanced electronics due to their excellent mobility, prominent transparency, and possibility of low-cost and scalable manufacturing; however, pristin...
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MDPI AG
2022-10-01
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| Series: | International Journal of Molecular Sciences |
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| Online Access: | https://www.mdpi.com/1422-0067/23/21/12912 |
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| author | Wangying Xu Tao Peng Shuangmu Zhuo Qiubao Lin Weicheng Huang Yujia Li Fang Xu Chun Zhao Deliang Zhu |
| author_facet | Wangying Xu Tao Peng Shuangmu Zhuo Qiubao Lin Weicheng Huang Yujia Li Fang Xu Chun Zhao Deliang Zhu |
| author_sort | Wangying Xu |
| collection | DOAJ |
| description | Solution-grown indium oxide (In<sub>2</sub>O<sub>3</sub>) based thin-film transistors (TFTs) hold good prospects for emerging advanced electronics due to their excellent mobility, prominent transparency, and possibility of low-cost and scalable manufacturing; however, pristine In<sub>2</sub>O<sub>3</sub> TFTs suffer from poor switching characteristics due to intrinsic oxygen-vacancy-related defects and require external doping. According to Shanmugam’s theory, among potential dopants, phosphorus (P) has a large dopant–oxygen bonding strength (E<sub>M-O</sub>) and high Lewis acid strength (L) that would suppress oxygen-vacancy related defects and mitigate dopant-induced carrier scattering; however, P-doped In<sub>2</sub>O<sub>3</sub> (IPO) TFTs have not yet been demonstrated. Here, we report aqueous solution-grown crystalline IPO TFTs for the first time. It is suggested that the incorporation of P could effectively inhibit oxygen-vacancy-related defects while maintaining high mobility. This work experimentally demonstrates that dopant with high E<sub>M-O</sub> and L is promising for emerging oxide TFTs. |
| first_indexed | 2024-03-09T19:01:24Z |
| format | Article |
| id | doaj.art-383bedb0a7184feebdbb13a3324b1c73 |
| institution | Directory Open Access Journal |
| issn | 1661-6596 1422-0067 |
| language | English |
| last_indexed | 2024-03-09T19:01:24Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | International Journal of Molecular Sciences |
| spelling | doaj.art-383bedb0a7184feebdbb13a3324b1c732023-11-24T04:59:12ZengMDPI AGInternational Journal of Molecular Sciences1661-65961422-00672022-10-0123211291210.3390/ijms232112912Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors ApplicationsWangying Xu0Tao Peng1Shuangmu Zhuo2Qiubao Lin3Weicheng Huang4Yujia Li5Fang Xu6Chun Zhao7Deliang Zhu8Department of Physics, School of Science, Jimei University, Xiamen 361021, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaDepartment of Physics, School of Science, Jimei University, Xiamen 361021, ChinaDepartment of Physics, School of Science, Jimei University, Xiamen 361021, ChinaDepartment of Physics, School of Science, Jimei University, Xiamen 361021, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Advanced Material Diagnostic Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, ChinaDepartment of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaSolution-grown indium oxide (In<sub>2</sub>O<sub>3</sub>) based thin-film transistors (TFTs) hold good prospects for emerging advanced electronics due to their excellent mobility, prominent transparency, and possibility of low-cost and scalable manufacturing; however, pristine In<sub>2</sub>O<sub>3</sub> TFTs suffer from poor switching characteristics due to intrinsic oxygen-vacancy-related defects and require external doping. According to Shanmugam’s theory, among potential dopants, phosphorus (P) has a large dopant–oxygen bonding strength (E<sub>M-O</sub>) and high Lewis acid strength (L) that would suppress oxygen-vacancy related defects and mitigate dopant-induced carrier scattering; however, P-doped In<sub>2</sub>O<sub>3</sub> (IPO) TFTs have not yet been demonstrated. Here, we report aqueous solution-grown crystalline IPO TFTs for the first time. It is suggested that the incorporation of P could effectively inhibit oxygen-vacancy-related defects while maintaining high mobility. This work experimentally demonstrates that dopant with high E<sub>M-O</sub> and L is promising for emerging oxide TFTs.https://www.mdpi.com/1422-0067/23/21/12912thin-film transistorssolution-growncrystalline oxide semiconductorsphosphorus doped indium oxide |
| spellingShingle | Wangying Xu Tao Peng Shuangmu Zhuo Qiubao Lin Weicheng Huang Yujia Li Fang Xu Chun Zhao Deliang Zhu Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications International Journal of Molecular Sciences thin-film transistors solution-grown crystalline oxide semiconductors phosphorus doped indium oxide |
| title | Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications |
| title_full | Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications |
| title_fullStr | Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications |
| title_full_unstemmed | Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications |
| title_short | Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications |
| title_sort | aqueous solution grown crystalline phosphorus doped indium oxide for thin film transistors applications |
| topic | thin-film transistors solution-grown crystalline oxide semiconductors phosphorus doped indium oxide |
| url | https://www.mdpi.com/1422-0067/23/21/12912 |
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