Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations
Abstract A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS2 and WSe2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐gate voltage. This feature is applied to logic operations, with...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-01-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202200704 |
| _version_ | 1797772511637667840 |
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| author | Yoshitaka Shingaya Amir Zulkefli Takuya Iwasaki Ryoma Hayakawa Shu Nakaharai Kenji Watanabe Takashi Taniguchi Yutaka Wakayama |
| author_facet | Yoshitaka Shingaya Amir Zulkefli Takuya Iwasaki Ryoma Hayakawa Shu Nakaharai Kenji Watanabe Takashi Taniguchi Yutaka Wakayama |
| author_sort | Yoshitaka Shingaya |
| collection | DOAJ |
| description | Abstract A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS2 and WSe2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐gate voltage. This feature is applied to logic operations, with the bottom‐ and top‐gate voltages acting as two input signals and the drain current (Id) monitored as an output signal. Importantly, a single dual‐gate AAT exhibits all the two‐input logic operations (AND, OR, XOR, NAND, NOR, and XNOR) under optimized input voltages. Additionally, drain voltage (Vd)‐induced switching between AND and OR logic operations is achieved. These features are advantageous for simplifying circuit design. |
| first_indexed | 2024-03-12T21:51:58Z |
| format | Article |
| id | doaj.art-3893960294d244a7a799c9e01c2aaff1 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T21:51:58Z |
| publishDate | 2023-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-3893960294d244a7a799c9e01c2aaff12023-07-26T01:35:51ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-01-0191n/an/a10.1002/aelm.202200704Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic OperationsYoshitaka Shingaya0Amir Zulkefli1Takuya Iwasaki2Ryoma Hayakawa3Shu Nakaharai4Kenji Watanabe5Takashi Taniguchi6Yutaka Wakayama7International Center for Materials Nanoarchitectonics (WPI‐MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanInternational Center for Materials Nanoarchitectonics (WPI‐MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanInternational Center for Materials Nanoarchitectonics (WPI‐MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanInternational Center for Materials Nanoarchitectonics (WPI‐MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanInternational Center for Materials Nanoarchitectonics (WPI‐MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanResearch Center for Functional Materials National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanInternational Center for Materials Nanoarchitectonics (WPI‐MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanInternational Center for Materials Nanoarchitectonics (WPI‐MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanAbstract A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS2 and WSe2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐gate voltage. This feature is applied to logic operations, with the bottom‐ and top‐gate voltages acting as two input signals and the drain current (Id) monitored as an output signal. Importantly, a single dual‐gate AAT exhibits all the two‐input logic operations (AND, OR, XOR, NAND, NOR, and XNOR) under optimized input voltages. Additionally, drain voltage (Vd)‐induced switching between AND and OR logic operations is achieved. These features are advantageous for simplifying circuit design.https://doi.org/10.1002/aelm.2022007042D materialsanti‐ambipolar transistorsreconfigurable logic circuitsReS 2WSe 2 |
| spellingShingle | Yoshitaka Shingaya Amir Zulkefli Takuya Iwasaki Ryoma Hayakawa Shu Nakaharai Kenji Watanabe Takashi Taniguchi Yutaka Wakayama Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations Advanced Electronic Materials 2D materials anti‐ambipolar transistors reconfigurable logic circuits ReS 2 WSe 2 |
| title | Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations |
| title_full | Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations |
| title_fullStr | Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations |
| title_full_unstemmed | Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations |
| title_short | Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations |
| title_sort | dual gate anti ambipolar transistor with van der waals res2 wse2 heterojunction for reconfigurable logic operations |
| topic | 2D materials anti‐ambipolar transistors reconfigurable logic circuits ReS 2 WSe 2 |
| url | https://doi.org/10.1002/aelm.202200704 |
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