Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations
Abstract A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS2 and WSe2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐gate voltage. This feature is applied to logic operations, with...
Main Authors: | Yoshitaka Shingaya, Amir Zulkefli, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley-VCH
2023-01-01
|
Series: | Advanced Electronic Materials |
Subjects: | |
Online Access: | https://doi.org/10.1002/aelm.202200704 |
Similar Items
-
Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors
by: Junseok Seo, et al.
Published: (2019-09-01) -
Multi-controllability of ambipolar photoconductivity in transition metal dichalcogenides van der Waals heterostructures
by: Elbanna, Ahmed, et al.
Published: (2023) -
Van der Waals Heterostructures With Built‐In Mie Resonances For Polarization‐Sensitive Photodetection
by: Jiahao Yan, et al.
Published: (2023-03-01) -
Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunction
by: Junqiang Zhu, et al.
Published: (2023-05-01) -
Reversing Interfacial Catalysis of Ambipolar WSe2 Single Crystal
by: Zegao Wang, et al.
Published: (2020-02-01)