Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations

Abstract A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS2 and WSe2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐gate voltage. This feature is applied to logic operations, with...

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Bibliographic Details
Main Authors: Yoshitaka Shingaya, Amir Zulkefli, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama
Format: Article
Language:English
Published: Wiley-VCH 2023-01-01
Series:Advanced Electronic Materials
Subjects:
Online Access:https://doi.org/10.1002/aelm.202200704

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