Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film
In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrati...
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MDPI AG
2021-08-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/9/2204 |
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| author | Chih-Chieh Hsu Po-Tsun Liu Kai-Jhih Gan Dun-Bao Ruan Simon M. Sze |
| author_facet | Chih-Chieh Hsu Po-Tsun Liu Kai-Jhih Gan Dun-Bao Ruan Simon M. Sze |
| author_sort | Chih-Chieh Hsu |
| collection | DOAJ |
| description | In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum. Furthermore, a stacking structure with different bilayer switching is also systematically discussed. Compared with an interchange stacking layer and other single layer memory, the CBRAM with specific stacking sequence of bilayer oxygen-poor/-rich IWZO (IWZOx/IWZOy, x < y) exhibits more stable distribution of a resistance state and also better endurance (more than 3 × 10<sup>4</sup> cycles). Meanwhile, the memory window of IWZOx/IWZOy can even be maintained over 10<sup>4</sup> s at 85 °C. Those improvements can be attributed to the oxygen vacancy distribution in switching layers, which may create a suitable environment for the conductive filament formation or rupture. Therefore, it is believed that the specific stacking bilayer IWZO CBRAM might further pave the way for emerging memory applications. |
| first_indexed | 2024-03-10T07:23:00Z |
| format | Article |
| id | doaj.art-3894d4afe23b4690a96c6edfd5ae056d |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T07:23:00Z |
| publishDate | 2021-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-3894d4afe23b4690a96c6edfd5ae056d2023-11-22T14:28:55ZengMDPI AGNanomaterials2079-49912021-08-01119220410.3390/nano11092204Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin FilmChih-Chieh Hsu0Po-Tsun Liu1Kai-Jhih Gan2Dun-Bao Ruan3Simon M. Sze4Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanIn this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum. Furthermore, a stacking structure with different bilayer switching is also systematically discussed. Compared with an interchange stacking layer and other single layer memory, the CBRAM with specific stacking sequence of bilayer oxygen-poor/-rich IWZO (IWZOx/IWZOy, x < y) exhibits more stable distribution of a resistance state and also better endurance (more than 3 × 10<sup>4</sup> cycles). Meanwhile, the memory window of IWZOx/IWZOy can even be maintained over 10<sup>4</sup> s at 85 °C. Those improvements can be attributed to the oxygen vacancy distribution in switching layers, which may create a suitable environment for the conductive filament formation or rupture. Therefore, it is believed that the specific stacking bilayer IWZO CBRAM might further pave the way for emerging memory applications.https://www.mdpi.com/2079-4991/11/9/2204conductive-bridge RAM (CBRAM)InWZnObilayer switching layerendurance cycledefect distribution |
| spellingShingle | Chih-Chieh Hsu Po-Tsun Liu Kai-Jhih Gan Dun-Bao Ruan Simon M. Sze Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film Nanomaterials conductive-bridge RAM (CBRAM) InWZnO bilayer switching layer endurance cycle defect distribution |
| title | Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film |
| title_full | Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film |
| title_fullStr | Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film |
| title_full_unstemmed | Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film |
| title_short | Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film |
| title_sort | oxygen concentration effect on conductive bridge random access memory of inwzno thin film |
| topic | conductive-bridge RAM (CBRAM) InWZnO bilayer switching layer endurance cycle defect distribution |
| url | https://www.mdpi.com/2079-4991/11/9/2204 |
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