Individuality of Dopants in Silicon Nano-pn Junctions
The reduced dimensionality of present electronic devices brings along changes in the dopant distribution in the device channel, in which only a small number of dopants exist. Recent studies demonstrated that individual dopants strongly affect the electrical characteristics of nanoscale transistors....
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Kaunas University of Technology
2014-06-01
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| Series: | Medžiagotyra |
| Subjects: | |
| Online Access: | http://matsc.ktu.lt/index.php/MatSc/article/view/6312 |
| _version_ | 1818039708213575680 |
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| author | Daniel MORARU Sri PURWIYANTI Roland NOWAK Takeshi MIZUNO Arief UDHIARTO Djoko HARTANTO Ryszard JABLONSKI Michiharu TABE |
| author_facet | Daniel MORARU Sri PURWIYANTI Roland NOWAK Takeshi MIZUNO Arief UDHIARTO Djoko HARTANTO Ryszard JABLONSKI Michiharu TABE |
| author_sort | Daniel MORARU |
| collection | DOAJ |
| description | The reduced dimensionality of present electronic devices brings along changes in the dopant distribution in the device channel, in which only a small number of dopants exist. Recent studies demonstrated that individual dopants strongly affect the electrical characteristics of nanoscale transistors. On the other hand, nanoscale pn junctions, building unit of more complex devices, have not been sufficiently studied from this viewpoint. In this work, we report several experiments that we carried out on nano-pn junctions in which the individuality of dopants is prominently observed. In electrical characteristics, we report, under various conditions, random telegraph signals (RTS) related to dopants as traps. The dynamic behavior of the depletion region of nano-pn junctions is also characterized by Kelvin probe force microscopy. <p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.20.2.6312">http://dx.doi.org/10.5755/j01.ms.20.2.6312</a></p> |
| first_indexed | 2024-12-10T08:02:55Z |
| format | Article |
| id | doaj.art-389ee034654f4b5197595842f6801016 |
| institution | Directory Open Access Journal |
| issn | 1392-1320 2029-7289 |
| language | English |
| last_indexed | 2024-12-10T08:02:55Z |
| publishDate | 2014-06-01 |
| publisher | Kaunas University of Technology |
| record_format | Article |
| series | Medžiagotyra |
| spelling | doaj.art-389ee034654f4b5197595842f68010162022-12-22T01:56:45ZengKaunas University of TechnologyMedžiagotyra1392-13202029-72892014-06-0120212913110.5755/j01.ms.20.2.63123153Individuality of Dopants in Silicon Nano-pn JunctionsDaniel MORARU0Sri PURWIYANTI1Roland NOWAK2Takeshi MIZUNO3Arief UDHIARTO4Djoko HARTANTO5Ryszard JABLONSKI6Michiharu TABE7Research Institute of Electronics, Shizuoka UniversityUniversity of IndonesiaUniversity of IndonesiaShizuoka UniversityUniversity of IndonesiaUniversity of IndonesiaWarsaw University of TechnologyShizuoka UniversityThe reduced dimensionality of present electronic devices brings along changes in the dopant distribution in the device channel, in which only a small number of dopants exist. Recent studies demonstrated that individual dopants strongly affect the electrical characteristics of nanoscale transistors. On the other hand, nanoscale pn junctions, building unit of more complex devices, have not been sufficiently studied from this viewpoint. In this work, we report several experiments that we carried out on nano-pn junctions in which the individuality of dopants is prominently observed. In electrical characteristics, we report, under various conditions, random telegraph signals (RTS) related to dopants as traps. The dynamic behavior of the depletion region of nano-pn junctions is also characterized by Kelvin probe force microscopy. <p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.20.2.6312">http://dx.doi.org/10.5755/j01.ms.20.2.6312</a></p>http://matsc.ktu.lt/index.php/MatSc/article/view/6312individual dopantpn junctionnanoscalesilicon-on-insulatorrandom telegraph signal |
| spellingShingle | Daniel MORARU Sri PURWIYANTI Roland NOWAK Takeshi MIZUNO Arief UDHIARTO Djoko HARTANTO Ryszard JABLONSKI Michiharu TABE Individuality of Dopants in Silicon Nano-pn Junctions Medžiagotyra individual dopant pn junction nanoscale silicon-on-insulator random telegraph signal |
| title | Individuality of Dopants in Silicon Nano-pn Junctions |
| title_full | Individuality of Dopants in Silicon Nano-pn Junctions |
| title_fullStr | Individuality of Dopants in Silicon Nano-pn Junctions |
| title_full_unstemmed | Individuality of Dopants in Silicon Nano-pn Junctions |
| title_short | Individuality of Dopants in Silicon Nano-pn Junctions |
| title_sort | individuality of dopants in silicon nano pn junctions |
| topic | individual dopant pn junction nanoscale silicon-on-insulator random telegraph signal |
| url | http://matsc.ktu.lt/index.php/MatSc/article/view/6312 |
| work_keys_str_mv | AT danielmoraru individualityofdopantsinsiliconnanopnjunctions AT sripurwiyanti individualityofdopantsinsiliconnanopnjunctions AT rolandnowak individualityofdopantsinsiliconnanopnjunctions AT takeshimizuno individualityofdopantsinsiliconnanopnjunctions AT ariefudhiarto individualityofdopantsinsiliconnanopnjunctions AT djokohartanto individualityofdopantsinsiliconnanopnjunctions AT ryszardjablonski individualityofdopantsinsiliconnanopnjunctions AT michiharutabe individualityofdopantsinsiliconnanopnjunctions |