KELVIN PROBE SELF-CALIBRATION MODE FOR SEMICONDUCTOR WAFERS PROPERTIES MONITORING
Improvement of repeatability and reliability of semiconductor wafers properties monitoring with a probe charge-sensitive methods is achieved by realization of Kelvin probe self-calibration mode using a wafer’s surface itself as a reference sample. Results of wafer surface scanning are visualized in...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Belarusian National Technical University
2015-03-01
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Series: | Приборы и методы измерений |
Subjects: | |
Online Access: | https://pimi.bntu.by/jour/article/view/79 |
Summary: | Improvement of repeatability and reliability of semiconductor wafers properties monitoring with a probe charge-sensitive methods is achieved by realization of Kelvin probe self-calibration mode using a wafer’s surface itself as a reference sample. Results of wafer surface scanning are visualized in the form of parameter distribution color map. A method of measurements based on Kelvin probe self-calibration mode is realized in a measurement installation for non-destructive non-contact monitoring of semiconductor wafer defects. Method can be used to define defects’ physical properties including minority carrier diffusion length and lifetime, trapped charge density and energy distribution etc. |
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ISSN: | 2220-9506 2414-0473 |