Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory
This paper comparatively reviews sensing circuit designs for the most widely used embedded memory, static random-access memory (SRAM). Many sensing circuits for SRAM have been proposed to improve power efficiency and speed, because sensing operations in SRAM dominantly determine the overall speed an...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-12-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/24/1/16 |
| _version_ | 1797358182119505920 |
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| author | Sangheon Lee Gwanwoo Park Hanwool Jeong |
| author_facet | Sangheon Lee Gwanwoo Park Hanwool Jeong |
| author_sort | Sangheon Lee |
| collection | DOAJ |
| description | This paper comparatively reviews sensing circuit designs for the most widely used embedded memory, static random-access memory (SRAM). Many sensing circuits for SRAM have been proposed to improve power efficiency and speed, because sensing operations in SRAM dominantly determine the overall speed and power consumption of the system-on-chip. This phenomenon is more pronounced in the nanoscale era, where SRAM bit-cells implemented near minimum-sized transistors are highly influenced by variation effects. Under this condition, for stable sensing, the control signal for accessing the selected bit-cell (word-line, WL) should be asserted for a long time, leading to increases in the power dissipation and delay at the same time. By innovating sensing circuits that can reduce the WL pulse width, the sensing power and speed can be efficiently improved, simultaneously. Throughout this paper, the strength and weakness of many SRAM sensing circuits are introduced in terms of various aspects—speed, area, power, etc. |
| first_indexed | 2024-03-08T14:58:13Z |
| format | Article |
| id | doaj.art-38b1eb812f70473fab7ad1decabe1f28 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-08T14:58:13Z |
| publishDate | 2023-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-38b1eb812f70473fab7ad1decabe1f282024-01-10T15:08:08ZengMDPI AGSensors1424-82202023-12-012411610.3390/s24010016Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded MemorySangheon Lee0Gwanwoo Park1Hanwool Jeong2Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of KoreaDepartment of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of KoreaDepartment of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of KoreaThis paper comparatively reviews sensing circuit designs for the most widely used embedded memory, static random-access memory (SRAM). Many sensing circuits for SRAM have been proposed to improve power efficiency and speed, because sensing operations in SRAM dominantly determine the overall speed and power consumption of the system-on-chip. This phenomenon is more pronounced in the nanoscale era, where SRAM bit-cells implemented near minimum-sized transistors are highly influenced by variation effects. Under this condition, for stable sensing, the control signal for accessing the selected bit-cell (word-line, WL) should be asserted for a long time, leading to increases in the power dissipation and delay at the same time. By innovating sensing circuits that can reduce the WL pulse width, the sensing power and speed can be efficiently improved, simultaneously. Throughout this paper, the strength and weakness of many SRAM sensing circuits are introduced in terms of various aspects—speed, area, power, etc.https://www.mdpi.com/1424-8220/24/1/16static random-access memorysensing circuitoffset voltage |
| spellingShingle | Sangheon Lee Gwanwoo Park Hanwool Jeong Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory Sensors static random-access memory sensing circuit offset voltage |
| title | Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory |
| title_full | Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory |
| title_fullStr | Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory |
| title_full_unstemmed | Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory |
| title_short | Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory |
| title_sort | design of high speed low power sensing circuits for nano scale embedded memory |
| topic | static random-access memory sensing circuit offset voltage |
| url | https://www.mdpi.com/1424-8220/24/1/16 |
| work_keys_str_mv | AT sangheonlee designofhighspeedlowpowersensingcircuitsfornanoscaleembeddedmemory AT gwanwoopark designofhighspeedlowpowersensingcircuitsfornanoscaleembeddedmemory AT hanwooljeong designofhighspeedlowpowersensingcircuitsfornanoscaleembeddedmemory |