Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate
Ferroelectric HfxZryOz (HZO) with an average polarization switching window of 32 µC/cm2 was demonstrated on a Si substrate with a ZrO2 interfacial layer (IL). It is suggested that the ZrO2 IL below HZO crystallizes in the form of an o-phase prior to HZO crystallization, during rapid thermal annealin...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5124402 |
| Summary: | Ferroelectric HfxZryOz (HZO) with an average polarization switching window of 32 µC/cm2 was demonstrated on a Si substrate with a ZrO2 interfacial layer (IL). It is suggested that the ZrO2 IL below HZO crystallizes in the form of an o-phase prior to HZO crystallization, during rapid thermal annealing, thereby promoting the vertical growth of an o-phase HZO layer. HZO with the ZrO2 IL consists mainly of an o-phase that exhibits an in-plane tensile stress of 2.68 GPa, resulting in superior ferroelectric characteristics. This technology has the potential to expedite the realization of ferroelectric Hf-based dielectrics in advanced memory and logic technology. |
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| ISSN: | 2158-3226 |