Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate
Ferroelectric HfxZryOz (HZO) with an average polarization switching window of 32 µC/cm2 was demonstrated on a Si substrate with a ZrO2 interfacial layer (IL). It is suggested that the ZrO2 IL below HZO crystallizes in the form of an o-phase prior to HZO crystallization, during rapid thermal annealin...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5124402 |
| _version_ | 1819073853014409216 |
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| author | Sang Jae Lee Min Ju Kim Tae Yoon Lee Tae In Lee Jae Hoon Bong Sung Won Shin Seong Ho Kim Wan Sik Hwang Byung Jin Cho |
| author_facet | Sang Jae Lee Min Ju Kim Tae Yoon Lee Tae In Lee Jae Hoon Bong Sung Won Shin Seong Ho Kim Wan Sik Hwang Byung Jin Cho |
| author_sort | Sang Jae Lee |
| collection | DOAJ |
| description | Ferroelectric HfxZryOz (HZO) with an average polarization switching window of 32 µC/cm2 was demonstrated on a Si substrate with a ZrO2 interfacial layer (IL). It is suggested that the ZrO2 IL below HZO crystallizes in the form of an o-phase prior to HZO crystallization, during rapid thermal annealing, thereby promoting the vertical growth of an o-phase HZO layer. HZO with the ZrO2 IL consists mainly of an o-phase that exhibits an in-plane tensile stress of 2.68 GPa, resulting in superior ferroelectric characteristics. This technology has the potential to expedite the realization of ferroelectric Hf-based dielectrics in advanced memory and logic technology. |
| first_indexed | 2024-12-21T18:00:13Z |
| format | Article |
| id | doaj.art-38b9223d37ed4c328b6068fc6fc4def2 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-21T18:00:13Z |
| publishDate | 2019-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-38b9223d37ed4c328b6068fc6fc4def22022-12-21T18:55:05ZengAIP Publishing LLCAIP Advances2158-32262019-12-01912125020125020-410.1063/1.5124402Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrateSang Jae Lee0Min Ju Kim1Tae Yoon Lee2Tae In Lee3Jae Hoon Bong4Sung Won Shin5Seong Ho Kim6Wan Sik Hwang7Byung Jin Cho8Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, South KoreaDepartment of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, South KoreaDepartment of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, South KoreaDepartment of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, South KoreaDepartment of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, South KoreaDepartment of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, South KoreaDepartment of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, South KoreaDepartment of Material Engineering, Korea Aerospace University, Gyeonggi-do 10540, South KoreaDepartment of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, South KoreaFerroelectric HfxZryOz (HZO) with an average polarization switching window of 32 µC/cm2 was demonstrated on a Si substrate with a ZrO2 interfacial layer (IL). It is suggested that the ZrO2 IL below HZO crystallizes in the form of an o-phase prior to HZO crystallization, during rapid thermal annealing, thereby promoting the vertical growth of an o-phase HZO layer. HZO with the ZrO2 IL consists mainly of an o-phase that exhibits an in-plane tensile stress of 2.68 GPa, resulting in superior ferroelectric characteristics. This technology has the potential to expedite the realization of ferroelectric Hf-based dielectrics in advanced memory and logic technology.http://dx.doi.org/10.1063/1.5124402 |
| spellingShingle | Sang Jae Lee Min Ju Kim Tae Yoon Lee Tae In Lee Jae Hoon Bong Sung Won Shin Seong Ho Kim Wan Sik Hwang Byung Jin Cho Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate AIP Advances |
| title | Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate |
| title_full | Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate |
| title_fullStr | Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate |
| title_full_unstemmed | Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate |
| title_short | Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate |
| title_sort | effect of zro2 interfacial layer on forming ferroelectric hfxzryoz on si substrate |
| url | http://dx.doi.org/10.1063/1.5124402 |
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