Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate

Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate

Ferroelectric HfxZryOz (HZO) with an average polarization switching window of 32 µC/cm2 was demonstrated on a Si substrate with a ZrO2 interfacial layer (IL). It is suggested that the ZrO2 IL below HZO crystallizes in the form of an o-phase prior to HZO crystallization, during rapid thermal annealin...

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Bibliographic Details
Main Authors:	Sang Jae Lee, Min Ju Kim, Tae Yoon Lee, Tae In Lee, Jae Hoon Bong, Sung Won Shin, Seong Ho Kim, Wan Sik Hwang, Byung Jin Cho
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2019-12-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5124402

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