Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films
We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition. The influence of post-growth annealing modes on the electroforming voltage and the resistive switchi...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-05-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/10/5/1007 |
| _version_ | 1797567073933590528 |
|---|---|
| author | Roman V. Tominov Zakhar E. Vakulov Vadim I. Avilov Daniil A. Khakhulin Aleksandr A. Fedotov Evgeny G. Zamburg Vladimir A. Smirnov Oleg A. Ageev |
| author_facet | Roman V. Tominov Zakhar E. Vakulov Vadim I. Avilov Daniil A. Khakhulin Aleksandr A. Fedotov Evgeny G. Zamburg Vladimir A. Smirnov Oleg A. Ageev |
| author_sort | Roman V. Tominov |
| collection | DOAJ |
| description | We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition. The influence of post-growth annealing modes on the electroforming voltage and the resistive switching effect in ZnO nanocrystalline films is investigated. We demonstrated that nanocrystalline zinc oxide films, fabricated at certain regimes, show the electroforming-free resistive switching. It was shown, that the forming-free nanocrystalline ZnO film demonstrated a resistive switching effect and switched at a voltage 1.9 ± 0.2 V from 62.42 ± 6.47 (<i>R<sub>HRS</sub></i>) to 0.83 ± 0.06 kΩ (<i>R<sub>LRS</sub></i>). The influence of ZnO surface morphology on the resistive switching effect is experimentally investigated. It was shown, that the ZnO nanocrystalline film exhibits a stable resistive switching effect, which is weakly dependent on its nanoscale structure. The influence of technological parameters on the resistive switching effect in a forming-free ZnO nanocrystalline film is investigated. The results can be used for fabrication of new-generation micro- and nanoelectronics elements, including random resistive memory (ReRAM) elements for neuromorphic structures based on forming-free ZnO nanocrystalline films. |
| first_indexed | 2024-03-10T19:36:26Z |
| format | Article |
| id | doaj.art-38c948b1ebe14f8faf4f8e92bc2bd2b9 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T19:36:26Z |
| publishDate | 2020-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-38c948b1ebe14f8faf4f8e92bc2bd2b92023-11-20T01:37:12ZengMDPI AGNanomaterials2079-49912020-05-01105100710.3390/nano10051007Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline FilmsRoman V. Tominov0Zakhar E. Vakulov1Vadim I. Avilov2Daniil A. Khakhulin3Aleksandr A. Fedotov4Evgeny G. Zamburg5Vladimir A. Smirnov6Oleg A. Ageev7Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaFederal Research Centre, The Southern Scientific Centre of the Russian Academy of Sciences, 344006 Rostov-on-Don, RussiaInstitute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInstitute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInstitute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaDepartment of Electrical & Computer Engineering, National University of Singapore, Singapore 117582, SingaporeInstitute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInstitute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaWe experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition. The influence of post-growth annealing modes on the electroforming voltage and the resistive switching effect in ZnO nanocrystalline films is investigated. We demonstrated that nanocrystalline zinc oxide films, fabricated at certain regimes, show the electroforming-free resistive switching. It was shown, that the forming-free nanocrystalline ZnO film demonstrated a resistive switching effect and switched at a voltage 1.9 ± 0.2 V from 62.42 ± 6.47 (<i>R<sub>HRS</sub></i>) to 0.83 ± 0.06 kΩ (<i>R<sub>LRS</sub></i>). The influence of ZnO surface morphology on the resistive switching effect is experimentally investigated. It was shown, that the ZnO nanocrystalline film exhibits a stable resistive switching effect, which is weakly dependent on its nanoscale structure. The influence of technological parameters on the resistive switching effect in a forming-free ZnO nanocrystalline film is investigated. The results can be used for fabrication of new-generation micro- and nanoelectronics elements, including random resistive memory (ReRAM) elements for neuromorphic structures based on forming-free ZnO nanocrystalline films.https://www.mdpi.com/2079-4991/10/5/1007neuromorphic systemsmemristorReRAMresistive switchingnanocrystalline ZnOpulsed laser deposition |
| spellingShingle | Roman V. Tominov Zakhar E. Vakulov Vadim I. Avilov Daniil A. Khakhulin Aleksandr A. Fedotov Evgeny G. Zamburg Vladimir A. Smirnov Oleg A. Ageev Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films Nanomaterials neuromorphic systems memristor ReRAM resistive switching nanocrystalline ZnO pulsed laser deposition |
| title | Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films |
| title_full | Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films |
| title_fullStr | Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films |
| title_full_unstemmed | Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films |
| title_short | Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films |
| title_sort | synthesis and memristor effect of a forming free zno nanocrystalline films |
| topic | neuromorphic systems memristor ReRAM resistive switching nanocrystalline ZnO pulsed laser deposition |
| url | https://www.mdpi.com/2079-4991/10/5/1007 |
| work_keys_str_mv | AT romanvtominov synthesisandmemristoreffectofaformingfreeznonanocrystallinefilms AT zakharevakulov synthesisandmemristoreffectofaformingfreeznonanocrystallinefilms AT vadimiavilov synthesisandmemristoreffectofaformingfreeznonanocrystallinefilms AT daniilakhakhulin synthesisandmemristoreffectofaformingfreeznonanocrystallinefilms AT aleksandrafedotov synthesisandmemristoreffectofaformingfreeznonanocrystallinefilms AT evgenygzamburg synthesisandmemristoreffectofaformingfreeznonanocrystallinefilms AT vladimirasmirnov synthesisandmemristoreffectofaformingfreeznonanocrystallinefilms AT olegaageev synthesisandmemristoreffectofaformingfreeznonanocrystallinefilms |