High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer
Abstract In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R ON, D) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation layer between the gate and drain electrodes. Instead...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-06-01
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| Series: | Nanoscale Research Letters |
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| Online Access: | http://link.springer.com/article/10.1186/s11671-019-3025-8 |
| _version_ | 1827831178416095232 |
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| author | Chao Yang Xiaorong Luo Tao Sun Anbang Zhang Dongfa Ouyang Siyu Deng Jie Wei Bo Zhang |
| author_facet | Chao Yang Xiaorong Luo Tao Sun Anbang Zhang Dongfa Ouyang Siyu Deng Jie Wei Bo Zhang |
| author_sort | Chao Yang |
| collection | DOAJ |
| description | Abstract In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R ON, D) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation layer between the gate and drain electrodes. Instead of the fluorine ion implantation in the thin AlGaN barrier layer, the peak position and vacancy distributions are far from the two-dimensional electron gas (2DEG) channel in the case of fluorine ion implantation in the thick passivation layer, which effectively suppresses the direct current (DC) static and pulsed dynamic characteristic degradation. The fluorine ions in the passivation layer also extend the depletion region and increase the average electric field (E-field) strength between the gate and drain, leading to an enhanced BV. The BV of the proposed HEMT increases to 803 V from 680 V of the conventional AlGaN/GaN HEMT (Conv. HEMT) with the same dimensional parameters. The measured R ON, D of the proposed HEMT is only increased by 23% at a high drain quiescent bias of 100 V, while the R ON, D of the HEMT with fluorine ion implantation in the thin AlGaN barrier layer is increased by 98%. |
| first_indexed | 2024-03-12T04:40:50Z |
| format | Article |
| id | doaj.art-38d1c512fdc94e3182c620ebc5275fb4 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T04:40:50Z |
| publishDate | 2019-06-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-38d1c512fdc94e3182c620ebc5275fb42023-09-03T09:42:32ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-06-011411610.1186/s11671-019-3025-8High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation LayerChao Yang0Xiaorong Luo1Tao Sun2Anbang Zhang3Dongfa Ouyang4Siyu Deng5Jie Wei6Bo Zhang7School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaSchool of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaSchool of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaSchool of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaSchool of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaSchool of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaSchool of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaSchool of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaAbstract In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R ON, D) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation layer between the gate and drain electrodes. Instead of the fluorine ion implantation in the thin AlGaN barrier layer, the peak position and vacancy distributions are far from the two-dimensional electron gas (2DEG) channel in the case of fluorine ion implantation in the thick passivation layer, which effectively suppresses the direct current (DC) static and pulsed dynamic characteristic degradation. The fluorine ions in the passivation layer also extend the depletion region and increase the average electric field (E-field) strength between the gate and drain, leading to an enhanced BV. The BV of the proposed HEMT increases to 803 V from 680 V of the conventional AlGaN/GaN HEMT (Conv. HEMT) with the same dimensional parameters. The measured R ON, D of the proposed HEMT is only increased by 23% at a high drain quiescent bias of 100 V, while the R ON, D of the HEMT with fluorine ion implantation in the thin AlGaN barrier layer is increased by 98%.http://link.springer.com/article/10.1186/s11671-019-3025-8AlGaN/GaN HEMTFluorine ion implantationSiNx passivation layerBreakdown voltageDynamic ON-resistance |
| spellingShingle | Chao Yang Xiaorong Luo Tao Sun Anbang Zhang Dongfa Ouyang Siyu Deng Jie Wei Bo Zhang High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer Nanoscale Research Letters AlGaN/GaN HEMT Fluorine ion implantation SiNx passivation layer Breakdown voltage Dynamic ON-resistance |
| title | High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer |
| title_full | High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer |
| title_fullStr | High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer |
| title_full_unstemmed | High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer |
| title_short | High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer |
| title_sort | high breakdown voltage and low dynamic on resistance algan gan hemt with fluorine ion implantation in sinx passivation layer |
| topic | AlGaN/GaN HEMT Fluorine ion implantation SiNx passivation layer Breakdown voltage Dynamic ON-resistance |
| url | http://link.springer.com/article/10.1186/s11671-019-3025-8 |
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