High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Abstract In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R ON, D) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation layer between the gate and drain electrodes. Instead...

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Bibliographic Details
Main Authors: Chao Yang, Xiaorong Luo, Tao Sun, Anbang Zhang, Dongfa Ouyang, Siyu Deng, Jie Wei, Bo Zhang
Format: Article
Language:English
Published: SpringerOpen 2019-06-01
Series:Nanoscale Research Letters
Subjects:
AlGaN/GaN HEMT
Fluorine ion implantation
SiNx passivation layer
Breakdown voltage
Dynamic ON-resistance
Online Access:http://link.springer.com/article/10.1186/s11671-019-3025-8

Internet

http://link.springer.com/article/10.1186/s11671-019-3025-8

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