Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics
We report a low-voltage-operated organic field-effect transistor that uses a hybrid gate insulator that has a high dielectric constant k . The gate insulator consists of a high- k polymer cyanoetylated pullulan (CEP) that can be efficiently cross-linked by glycidoxypropyltrimethoxysilane (GOPTMS) at...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2022-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac7e24 |
| _version_ | 1827868702913069056 |
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| author | Yiwen Liu Yongfei Wang Xiao Li Zhizhi Hu |
| author_facet | Yiwen Liu Yongfei Wang Xiao Li Zhizhi Hu |
| author_sort | Yiwen Liu |
| collection | DOAJ |
| description | We report a low-voltage-operated organic field-effect transistor that uses a hybrid gate insulator that has a high dielectric constant k . The gate insulator consists of a high- k polymer cyanoetylated pullulan (CEP) that can be efficiently cross-linked by glycidoxypropyltrimethoxysilane (GOPTMS) at low temperature (∼110 °C). The very low curing temperature is below the glass transition temperature T _g of conventional plastic substrates for plastic electronics, and is therefore compatible with many plastic substrates for plastic electronics. The cross-linking is very efficient in that only 1/10 (w:w) GOPTMS: CEP produced densely cross-linked thin films with a smooth surface, good insulating property, high capacitance density and high k . The devices functioned at low voltage, and exhibited charge carrier mobility ∼1.83 cm ^2 V ^−1 s ^−1 , and steep substheshold swing ∼88 mV dec ^−1 . These results imply that high quality polymer gate insulators are achievable at low temperature with a very small fraction of blended crosslinking agents; this characteristic offers a method to achieve portable all-plastic flexible electronics that function at low voltage. |
| first_indexed | 2024-03-12T15:35:11Z |
| format | Article |
| id | doaj.art-38d7f278d24c41f2ad62a6b8a0f896ff |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:35:11Z |
| publishDate | 2022-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-38d7f278d24c41f2ad62a6b8a0f896ff2023-08-09T16:15:09ZengIOP PublishingMaterials Research Express2053-15912022-01-019707630110.1088/2053-1591/ac7e24Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectricsYiwen Liu0https://orcid.org/0000-0003-0276-5034Yongfei Wang1https://orcid.org/0000-0003-3369-5518Xiao Li2Zhizhi Hu3Key Laboratory for Functional Material, School of Chemical Engineering, University of Science and Technology Liaoning , 185 Qianshan Zhong Road, Anshan 114051, People’s Republic of ChinaKey Laboratory for Functional Material, School of Chemical Engineering, University of Science and Technology Liaoning , 185 Qianshan Zhong Road, Anshan 114051, People’s Republic of ChinaKey Laboratory for Functional Material, School of Chemical Engineering, University of Science and Technology Liaoning , 185 Qianshan Zhong Road, Anshan 114051, People’s Republic of ChinaKey Laboratory for Functional Material, School of Chemical Engineering, University of Science and Technology Liaoning , 185 Qianshan Zhong Road, Anshan 114051, People’s Republic of ChinaWe report a low-voltage-operated organic field-effect transistor that uses a hybrid gate insulator that has a high dielectric constant k . The gate insulator consists of a high- k polymer cyanoetylated pullulan (CEP) that can be efficiently cross-linked by glycidoxypropyltrimethoxysilane (GOPTMS) at low temperature (∼110 °C). The very low curing temperature is below the glass transition temperature T _g of conventional plastic substrates for plastic electronics, and is therefore compatible with many plastic substrates for plastic electronics. The cross-linking is very efficient in that only 1/10 (w:w) GOPTMS: CEP produced densely cross-linked thin films with a smooth surface, good insulating property, high capacitance density and high k . The devices functioned at low voltage, and exhibited charge carrier mobility ∼1.83 cm ^2 V ^−1 s ^−1 , and steep substheshold swing ∼88 mV dec ^−1 . These results imply that high quality polymer gate insulators are achievable at low temperature with a very small fraction of blended crosslinking agents; this characteristic offers a method to achieve portable all-plastic flexible electronics that function at low voltage.https://doi.org/10.1088/2053-1591/ac7e24high-k polymergate insulatorlow-temperature curingcyanoethylated pullulan (CEP)organic field-effect transistorlow-voltage operation |
| spellingShingle | Yiwen Liu Yongfei Wang Xiao Li Zhizhi Hu Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics Materials Research Express high-k polymer gate insulator low-temperature curing cyanoethylated pullulan (CEP) organic field-effect transistor low-voltage operation |
| title | Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics |
| title_full | Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics |
| title_fullStr | Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics |
| title_full_unstemmed | Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics |
| title_short | Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics |
| title_sort | organic field effect transistors with low temperature curable high k hybrid gate dielectrics |
| topic | high-k polymer gate insulator low-temperature curing cyanoethylated pullulan (CEP) organic field-effect transistor low-voltage operation |
| url | https://doi.org/10.1088/2053-1591/ac7e24 |
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