Stability enhancement and resistance drift suppression of antimony thin films by hafnium oxide interlayers

Antimony material was an important phase change ingredient, but its poor amorphous stability and high resistance drift limited its application in phase change memory. In this paper, hafnium oxide (HfO2) material with a wide gap was proposed to improve the properties of Sb. Sb/HfO2 composite films we...

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Bibliographic Details
Main Authors: Junbo Xu, Yifeng Hu
Format: Article
Language:English
Published: Elsevier 2022-05-01
Series:Journal of Materials Research and Technology
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785422006342