Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors
The controllable growth of two-dimensional (2D) semiconductors with large domain sizes and high quality is much needed in order to reduce the detrimental effect of grain boundaries on device performance but has proven to be challenging. Here, we analyze the precursor concentration on the substrate s...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Association for the Advancement of Science (AAAS)
2019-01-01
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| Series: | Research |
| Online Access: | http://dx.doi.org/10.34133/2019/2763704 |
| _version_ | 1797287492777410560 |
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| author | Lei Tang Changjiu Teng Yuting Luo Usman Khan Haiyang Pan Zhengyang Cai Yue Zhao Bilu Liu Hui-Ming Cheng |
| author_facet | Lei Tang Changjiu Teng Yuting Luo Usman Khan Haiyang Pan Zhengyang Cai Yue Zhao Bilu Liu Hui-Ming Cheng |
| author_sort | Lei Tang |
| collection | DOAJ |
| description | The controllable growth of two-dimensional (2D) semiconductors with large domain sizes and high quality is much needed in order to reduce the detrimental effect of grain boundaries on device performance but has proven to be challenging. Here, we analyze the precursor concentration on the substrate surface which significantly influences nucleation density in a vapor deposition growth process and design a confined micro-reactor to grow 2D In2Se3 with large domain sizes and high quality. The uniqueness of this confined micro-reactor is that its size is ~102-103 times smaller than that of a conventional reactor. Such a remarkably small reactor causes a very low precursor concentration on the substrate surface, which reduces nucleation density and leads to the growth of 2D In2Se3 grains with sizes larger than 200 μm. Our experimental results show large domain sizes of the 2D In2Se3 with high crystallinity. The flexible broadband photodetectors based on the as-grown In2Se3 show rise and decay times of 140 ms and 25 ms, efficient response (5.6 A/W), excellent detectivity (7×1010 Jones), high external quantum efficiency (251%), good flexibility, and high stability. This study, in principle, provides an effective strategy for the controllable growth of high quality 2D materials with few grain boundaries. |
| first_indexed | 2024-03-07T18:33:54Z |
| format | Article |
| id | doaj.art-39025a5bcb914405acddb81f2e2e9e18 |
| institution | Directory Open Access Journal |
| issn | 2639-5274 |
| language | English |
| last_indexed | 2024-03-07T18:33:54Z |
| publishDate | 2019-01-01 |
| publisher | American Association for the Advancement of Science (AAAS) |
| record_format | Article |
| series | Research |
| spelling | doaj.art-39025a5bcb914405acddb81f2e2e9e182024-03-02T05:26:30ZengAmerican Association for the Advancement of Science (AAAS)Research2639-52742019-01-01201910.34133/2019/2763704Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband PhotodetectorsLei Tang0Changjiu Teng1Yuting Luo2Usman Khan3Haiyang Pan4Zhengyang Cai5Yue Zhao6Bilu Liu7Hui-Ming Cheng8Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, ChinaShenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, ChinaShenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, ChinaShenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, ChinaShenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, ChinaShenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, ChinaShenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China; Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, ChinaShenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, ChinaShenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China; Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, ChinaThe controllable growth of two-dimensional (2D) semiconductors with large domain sizes and high quality is much needed in order to reduce the detrimental effect of grain boundaries on device performance but has proven to be challenging. Here, we analyze the precursor concentration on the substrate surface which significantly influences nucleation density in a vapor deposition growth process and design a confined micro-reactor to grow 2D In2Se3 with large domain sizes and high quality. The uniqueness of this confined micro-reactor is that its size is ~102-103 times smaller than that of a conventional reactor. Such a remarkably small reactor causes a very low precursor concentration on the substrate surface, which reduces nucleation density and leads to the growth of 2D In2Se3 grains with sizes larger than 200 μm. Our experimental results show large domain sizes of the 2D In2Se3 with high crystallinity. The flexible broadband photodetectors based on the as-grown In2Se3 show rise and decay times of 140 ms and 25 ms, efficient response (5.6 A/W), excellent detectivity (7×1010 Jones), high external quantum efficiency (251%), good flexibility, and high stability. This study, in principle, provides an effective strategy for the controllable growth of high quality 2D materials with few grain boundaries.http://dx.doi.org/10.34133/2019/2763704 |
| spellingShingle | Lei Tang Changjiu Teng Yuting Luo Usman Khan Haiyang Pan Zhengyang Cai Yue Zhao Bilu Liu Hui-Ming Cheng Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors Research |
| title | Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors |
| title_full | Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors |
| title_fullStr | Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors |
| title_full_unstemmed | Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors |
| title_short | Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors |
| title_sort | confined van der waals epitaxial growth of two dimensional large single crystal in2se3 for flexible broadband photodetectors |
| url | http://dx.doi.org/10.34133/2019/2763704 |
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