Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
The problem of graphene protection of Ge surfaces against oxidation is investigated. Raman, X-Ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements of graphene epitaxially grown on Ge(001)/Si(001) substrates are presented. It is shown that the penet...
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MDPI AG
2022-06-01
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| Series: | Molecules |
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| Online Access: | https://www.mdpi.com/1420-3049/27/11/3636 |
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| author | Ewa Dumiszewska Paweł Ciepielewski Piotr A. Caban Iwona Jóźwik Jaroslaw Gaca Jacek M. Baranowski |
| author_facet | Ewa Dumiszewska Paweł Ciepielewski Piotr A. Caban Iwona Jóźwik Jaroslaw Gaca Jacek M. Baranowski |
| author_sort | Ewa Dumiszewska |
| collection | DOAJ |
| description | The problem of graphene protection of Ge surfaces against oxidation is investigated. Raman, X-Ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements of graphene epitaxially grown on Ge(001)/Si(001) substrates are presented. It is shown that the penetration of water vapor through graphene defects on Gr/Ge(001)/Si(001) samples leads to the oxidation of germanium, forming GeO<sub>2</sub>. The presence of trigonal GeO<sub>2</sub> under graphene was identified by Raman and XRD measurements. The oxidation of Ge leads to the formation of blisters under the graphene layer. It is suggested that oxidation of Ge is connected with the dissociation of water molecules and penetration of OH molecules or O to the Ge surface. It has also been found that the formation of blisters of GeO<sub>2</sub> leads to a dramatic increase in the intensity of the graphene Raman spectrum. The increase in the Raman signal intensity is most likely due to the screening of graphene by GeO<sub>2</sub> from the Ge(001) surface. |
| first_indexed | 2024-03-10T01:02:22Z |
| format | Article |
| id | doaj.art-391d417f8791459eb961cdaf54e8b4c6 |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-10T01:02:22Z |
| publishDate | 2022-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-391d417f8791459eb961cdaf54e8b4c62023-11-23T14:32:00ZengMDPI AGMolecules1420-30492022-06-012711363610.3390/molecules27113636Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water VaporEwa Dumiszewska0Paweł Ciepielewski1Piotr A. Caban2Iwona Jóźwik3Jaroslaw Gaca4Jacek M. Baranowski5Łukasiewicz Research Network, Institute of Microelectronics and Photonics, Al. Lotnikow 32/46 Str., 02-668 Warsaw, PolandŁukasiewicz Research Network, Institute of Microelectronics and Photonics, Al. Lotnikow 32/46 Str., 02-668 Warsaw, PolandŁukasiewicz Research Network, Institute of Microelectronics and Photonics, Al. Lotnikow 32/46 Str., 02-668 Warsaw, PolandŁukasiewicz Research Network, Institute of Microelectronics and Photonics, Al. Lotnikow 32/46 Str., 02-668 Warsaw, PolandŁukasiewicz Research Network, Institute of Microelectronics and Photonics, Al. Lotnikow 32/46 Str., 02-668 Warsaw, PolandŁukasiewicz Research Network, Institute of Microelectronics and Photonics, Al. Lotnikow 32/46 Str., 02-668 Warsaw, PolandThe problem of graphene protection of Ge surfaces against oxidation is investigated. Raman, X-Ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements of graphene epitaxially grown on Ge(001)/Si(001) substrates are presented. It is shown that the penetration of water vapor through graphene defects on Gr/Ge(001)/Si(001) samples leads to the oxidation of germanium, forming GeO<sub>2</sub>. The presence of trigonal GeO<sub>2</sub> under graphene was identified by Raman and XRD measurements. The oxidation of Ge leads to the formation of blisters under the graphene layer. It is suggested that oxidation of Ge is connected with the dissociation of water molecules and penetration of OH molecules or O to the Ge surface. It has also been found that the formation of blisters of GeO<sub>2</sub> leads to a dramatic increase in the intensity of the graphene Raman spectrum. The increase in the Raman signal intensity is most likely due to the screening of graphene by GeO<sub>2</sub> from the Ge(001) surface.https://www.mdpi.com/1420-3049/27/11/3636grapheneRaman spectroscopygermanium oxide |
| spellingShingle | Ewa Dumiszewska Paweł Ciepielewski Piotr A. Caban Iwona Jóźwik Jaroslaw Gaca Jacek M. Baranowski Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor Molecules graphene Raman spectroscopy germanium oxide |
| title | Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor |
| title_full | Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor |
| title_fullStr | Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor |
| title_full_unstemmed | Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor |
| title_short | Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor |
| title_sort | formation of geo sub 2 sub under graphene on ge 001 si 001 substrates using water vapor |
| topic | graphene Raman spectroscopy germanium oxide |
| url | https://www.mdpi.com/1420-3049/27/11/3636 |
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