| Summary: | High-temperature, high-power converters have gained importance in industrial applications given their ability to operate in adverse environments, such as in petroleum exploration, multi-electric aircrafts, and electric vehicles. SiC metal- oxide-semiconductor field-effect transistor (MOSFET), a new, wide bandgap, high-temperature device, is the key component of these converters. In this study, the static and dynamic characteristics of the SiC MOSFET, half-bridge module, are investigated at the junction temperature of 180 °C. A simplified experimental method is then proposed pertaining to the power operation of the SiC module at 180 °C. This method is based on the use of a thermal resistance test platform and is proven convenient for the study of heat dissipation characteristics. The high-temperature characteristics of the module are verified based on the conducted experiments. Accordingly, a 100 kW high-temperature converter is built, and the test results show that the SiC converter can operate at a junction temperature of 180 °C in a stable manner in compliance with the requirements of high-temperature, high-power applications. Keywords: SiC MOSFET module, Static and dynamic characteristics, Power operation experimental method, Heat dissipation characteristics, SiC AC-DC converter
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