High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180 °C

High-temperature, high-power converters have gained importance in industrial applications given their ability to operate in adverse environments, such as in petroleum exploration, multi-electric aircrafts, and electric vehicles. SiC metal- oxide-semiconductor field-effect transistor (MOSFET), a new,...

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Main Authors: Juanjuan Lu, Zhe Zhou, Jianhong Hao, Yi Hao, Hao Zhang, Ruixiang Hao
Format: Article
Language:English
Published: KeAi Communications Co., Ltd. 2019-12-01
Series:Global Energy Interconnection
Online Access:http://www.sciencedirect.com/science/article/pii/S2096511720300062
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author Juanjuan Lu
Zhe Zhou
Jianhong Hao
Yi Hao
Hao Zhang
Ruixiang Hao
author_facet Juanjuan Lu
Zhe Zhou
Jianhong Hao
Yi Hao
Hao Zhang
Ruixiang Hao
author_sort Juanjuan Lu
collection DOAJ
description High-temperature, high-power converters have gained importance in industrial applications given their ability to operate in adverse environments, such as in petroleum exploration, multi-electric aircrafts, and electric vehicles. SiC metal- oxide-semiconductor field-effect transistor (MOSFET), a new, wide bandgap, high-temperature device, is the key component of these converters. In this study, the static and dynamic characteristics of the SiC MOSFET, half-bridge module, are investigated at the junction temperature of 180 °C. A simplified experimental method is then proposed pertaining to the power operation of the SiC module at 180 °C. This method is based on the use of a thermal resistance test platform and is proven convenient for the study of heat dissipation characteristics. The high-temperature characteristics of the module are verified based on the conducted experiments. Accordingly, a 100 kW high-temperature converter is built, and the test results show that the SiC converter can operate at a junction temperature of 180 °C in a stable manner in compliance with the requirements of high-temperature, high-power applications. Keywords: SiC MOSFET module, Static and dynamic characteristics, Power operation experimental method, Heat dissipation characteristics, SiC AC-DC converter
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spelling doaj.art-39979be60634450cb6c4e4a5efbc1cac2022-12-21T22:01:48ZengKeAi Communications Co., Ltd.Global Energy Interconnection2096-51172019-12-0126521530High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180 °CJuanjuan Lu0Zhe Zhou1Jianhong Hao2Yi Hao3Hao Zhang4Ruixiang Hao5State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Changping District, Beijing 102206, P. R. China; State Key Laboratory of Advanced Transmission Technology, Global Electricity Interconnection Research Institute Co., Ltd., Changping District, Beijing 102211, P. R. China; Corresponding author.State Key Laboratory of Advanced Transmission Technology, Global Electricity Interconnection Research Institute Co., Ltd., Changping District, Beijing 102211, P. R. ChinaState Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Changping District, Beijing 102206, P. R. ChinaState Key Laboratory of Advanced Transmission Technology, Global Electricity Interconnection Research Institute Co., Ltd., Changping District, Beijing 102211, P. R. ChinaUniversity of Bath, Claverton Down, Bath BA2 7AY, UKSchool of Electrical Engineering, Beijing Jiaotong University, Haidian District, Beijing 100044, P. R. ChinaHigh-temperature, high-power converters have gained importance in industrial applications given their ability to operate in adverse environments, such as in petroleum exploration, multi-electric aircrafts, and electric vehicles. SiC metal- oxide-semiconductor field-effect transistor (MOSFET), a new, wide bandgap, high-temperature device, is the key component of these converters. In this study, the static and dynamic characteristics of the SiC MOSFET, half-bridge module, are investigated at the junction temperature of 180 °C. A simplified experimental method is then proposed pertaining to the power operation of the SiC module at 180 °C. This method is based on the use of a thermal resistance test platform and is proven convenient for the study of heat dissipation characteristics. The high-temperature characteristics of the module are verified based on the conducted experiments. Accordingly, a 100 kW high-temperature converter is built, and the test results show that the SiC converter can operate at a junction temperature of 180 °C in a stable manner in compliance with the requirements of high-temperature, high-power applications. Keywords: SiC MOSFET module, Static and dynamic characteristics, Power operation experimental method, Heat dissipation characteristics, SiC AC-DC converterhttp://www.sciencedirect.com/science/article/pii/S2096511720300062
spellingShingle Juanjuan Lu
Zhe Zhou
Jianhong Hao
Yi Hao
Hao Zhang
Ruixiang Hao
High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180 °C
Global Energy Interconnection
title High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180 °C
title_full High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180 °C
title_fullStr High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180 °C
title_full_unstemmed High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180 °C
title_short High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180 °C
title_sort high temperature characteristics of sic module and 100 kw sic ac dc converter at a junction temperature of 180 °c
url http://www.sciencedirect.com/science/article/pii/S2096511720300062
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