Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films
<p>Abstract</p> <p>In this article, the microstructure and photoluminescence (PL) properties of Nd-doped silicon-rich silicon oxide (SRSO) are reported as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/161 |
| _version_ | 1827845864483192832 |
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| author | Debieu Olivier Cardin Julien Portier Xavier Gourbilleau Fabrice |
| author_facet | Debieu Olivier Cardin Julien Portier Xavier Gourbilleau Fabrice |
| author_sort | Debieu Olivier |
| collection | DOAJ |
| description | <p>Abstract</p> <p>In this article, the microstructure and photoluminescence (PL) properties of Nd-doped silicon-rich silicon oxide (SRSO) are reported as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering, contain the same Si excess as determined by Rutherford backscattering spectrometry. Fourier transform infrared (FTIR) spectra show that a phase separation occurs during the annealing because of the condensation of the Si excess resulting in the formation of silicon nanoparticles (Si-np) as detected by high-resolution transmission electron microscopy and X-ray diffraction (XRD) measurements. Under non-resonant excitation at 488 nm, our Nd-doped SRSO films simultaneously exhibited PL from Si-np and Nd<sup>3+ </sup>demonstrating the efficient energy transfer between Si-np and Nd<sup>3+ </sup>and the sensitizing effect of Si-np. Upon increasing the Nd concentration from 0.08 to 4.9 at.%, our samples revealed a progressive quenching of the Nd<sup>3+ </sup>PL which can be correlated with the concomitant increase of disorder within the host matrix as shown by FTIR experiments. Moreover, the presence of Nd-oxide nanocrystals in the highest Nd-doped sample was established by XRD. It is, therefore, suggested that the Nd clustering, as well as disorder, are responsible for the concentration quenching of the PL of Nd<sup>3+</sup>.</p> |
| first_indexed | 2024-03-12T09:04:34Z |
| format | Article |
| id | doaj.art-39a3695da0d54c659b7b12a23c511623 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T09:04:34Z |
| publishDate | 2011-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-39a3695da0d54c659b7b12a23c5116232023-09-02T15:23:08ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161161Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin filmsDebieu OlivierCardin JulienPortier XavierGourbilleau Fabrice<p>Abstract</p> <p>In this article, the microstructure and photoluminescence (PL) properties of Nd-doped silicon-rich silicon oxide (SRSO) are reported as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering, contain the same Si excess as determined by Rutherford backscattering spectrometry. Fourier transform infrared (FTIR) spectra show that a phase separation occurs during the annealing because of the condensation of the Si excess resulting in the formation of silicon nanoparticles (Si-np) as detected by high-resolution transmission electron microscopy and X-ray diffraction (XRD) measurements. Under non-resonant excitation at 488 nm, our Nd-doped SRSO films simultaneously exhibited PL from Si-np and Nd<sup>3+ </sup>demonstrating the efficient energy transfer between Si-np and Nd<sup>3+ </sup>and the sensitizing effect of Si-np. Upon increasing the Nd concentration from 0.08 to 4.9 at.%, our samples revealed a progressive quenching of the Nd<sup>3+ </sup>PL which can be correlated with the concomitant increase of disorder within the host matrix as shown by FTIR experiments. Moreover, the presence of Nd-oxide nanocrystals in the highest Nd-doped sample was established by XRD. It is, therefore, suggested that the Nd clustering, as well as disorder, are responsible for the concentration quenching of the PL of Nd<sup>3+</sup>.</p>http://www.nanoscalereslett.com/content/6/1/161 |
| spellingShingle | Debieu Olivier Cardin Julien Portier Xavier Gourbilleau Fabrice Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films Nanoscale Research Letters |
| title | Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films |
| title_full | Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films |
| title_fullStr | Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films |
| title_full_unstemmed | Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films |
| title_short | Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films |
| title_sort | effect of the nd content on the structural and photoluminescence properties of silicon rich silicon dioxide thin films |
| url | http://www.nanoscalereslett.com/content/6/1/161 |
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