Behavioral modeling of stressed MOSFET
In this paper piezoconductivity phenomenon in MOSFET channel is discussed and extension of drain current model with possibility of stress consideration is proposed. Analysis of obtained model combined with examination of stress components inherent in the MOSFET channel as well as distributions of sp...
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| Format: | Article |
| Language: | English |
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Warsaw School of Computer Science
2015-12-01
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| Series: | Zeszyty Naukowe Warszawskiej Wyższej Szkoły Informatyki |
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| Online Access: | http://zeszyty-naukowe.wwsi.edu.pl/zeszyty/zeszyt13/Behavioral_modeling_of_stressed_MOSFET.pdf |
| _version_ | 1817987030872752128 |
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| author | Zenon Gniazdowski |
| author_facet | Zenon Gniazdowski |
| author_sort | Zenon Gniazdowski |
| collection | DOAJ |
| description | In this paper piezoconductivity phenomenon in MOSFET channel is discussed and extension of drain current model with possibility of stress consideration is proposed. Analysis of obtained model combined with examination of stress components inherent in the MOSFET channel as well as distributions of specific piezoconductance coefficients on a plane of channel can show which directions of transistor channel are desirable for improvement of MOSFET performances. This model gives possibility to predict optimal transistor channel orientation, for the given stress state in MOSFET channel. Possible simplification of this model is considered. In particular, stress state and significant piezoconductance coefficient distributions on planes {100}, {110} as well as {111} are analyzed. For assumed particular cases of stress state in the channel, final models of MOSFT for considered specific planes are given. |
| first_indexed | 2024-04-14T00:16:51Z |
| format | Article |
| id | doaj.art-39b80ac28b7f4344ad29971f618e416d |
| institution | Directory Open Access Journal |
| issn | 1896-396X 2082-8349 |
| language | English |
| last_indexed | 2024-04-14T00:16:51Z |
| publishDate | 2015-12-01 |
| publisher | Warsaw School of Computer Science |
| record_format | Article |
| series | Zeszyty Naukowe Warszawskiej Wyższej Szkoły Informatyki |
| spelling | doaj.art-39b80ac28b7f4344ad29971f618e416d2022-12-22T02:23:05ZengWarsaw School of Computer ScienceZeszyty Naukowe Warszawskiej Wyższej Szkoły Informatyki1896-396X2082-83492015-12-0191310312610.26348/znwwsi.13.103Behavioral modeling of stressed MOSFETZenon Gniazdowski0Warsaw School of Computer ScienceIn this paper piezoconductivity phenomenon in MOSFET channel is discussed and extension of drain current model with possibility of stress consideration is proposed. Analysis of obtained model combined with examination of stress components inherent in the MOSFET channel as well as distributions of specific piezoconductance coefficients on a plane of channel can show which directions of transistor channel are desirable for improvement of MOSFET performances. This model gives possibility to predict optimal transistor channel orientation, for the given stress state in MOSFET channel. Possible simplification of this model is considered. In particular, stress state and significant piezoconductance coefficient distributions on planes {100}, {110} as well as {111} are analyzed. For assumed particular cases of stress state in the channel, final models of MOSFT for considered specific planes are given.http://zeszyty-naukowe.wwsi.edu.pl/zeszyty/zeszyt13/Behavioral_modeling_of_stressed_MOSFET.pdfpiezoconductivitystressed mosfetstrained siliconmosfet modelspice model |
| spellingShingle | Zenon Gniazdowski Behavioral modeling of stressed MOSFET Zeszyty Naukowe Warszawskiej Wyższej Szkoły Informatyki piezoconductivity stressed mosfet strained silicon mosfet model spice model |
| title | Behavioral modeling of stressed MOSFET |
| title_full | Behavioral modeling of stressed MOSFET |
| title_fullStr | Behavioral modeling of stressed MOSFET |
| title_full_unstemmed | Behavioral modeling of stressed MOSFET |
| title_short | Behavioral modeling of stressed MOSFET |
| title_sort | behavioral modeling of stressed mosfet |
| topic | piezoconductivity stressed mosfet strained silicon mosfet model spice model |
| url | http://zeszyty-naukowe.wwsi.edu.pl/zeszyty/zeszyt13/Behavioral_modeling_of_stressed_MOSFET.pdf |
| work_keys_str_mv | AT zenongniazdowski behavioralmodelingofstressedmosfet |