Resistive Switching of GaAs Oxide Nanostructures
The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide wi...
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2020-08-01
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| Online Access: | https://www.mdpi.com/1996-1944/13/16/3451 |
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| author | Vadim Avilov Nikita Polupanov Roman Tominov Maxim Solodovnik Boris Konoplev Vladimir Smirnov Oleg Ageev |
| author_facet | Vadim Avilov Nikita Polupanov Roman Tominov Maxim Solodovnik Boris Konoplev Vladimir Smirnov Oleg Ageev |
| author_sort | Vadim Avilov |
| collection | DOAJ |
| description | The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide with an impurity concentration of 5 × 10<sup>17</sup> cm<sup>−3</sup>. X-ray photoelectron spectroscopy measurements showed that GaAs oxide consists of oxide phases Ga<sub>2</sub>O<sub>3</sub> and As<sub>2</sub>O<sub>3</sub>, and the thickness of the Ga<sub>2</sub>O<sub>3</sub> layer is 2–3 times greater than the thickness of As<sub>2</sub>O<sub>3</sub> area—i.e., the oxidized GaAs region consists mainly of Ga<sub>2</sub>O<sub>3</sub>. The experimental studies of the influence of ONS thickness on the resistive switching effect were obtained. An increase in the ONS thickness from 0.8 ± 0.3 to 7.6 ± 0.6 nm leads to an increase in the switching voltage <i>Uset</i> from 2.8 ± 0.3 to 6.8 ± 0.9 V. The results can be used in the development of technological processes for the manufacturing of nano-electronic elements, such as ReRAM, as well as a high-efficiency quantum dot laser. |
| first_indexed | 2024-03-10T17:56:48Z |
| format | Article |
| id | doaj.art-39e5946dbfe24427849c658941d8d97d |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T17:56:48Z |
| publishDate | 2020-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-39e5946dbfe24427849c658941d8d97d2023-11-20T09:09:50ZengMDPI AGMaterials1996-19442020-08-011316345110.3390/ma13163451Resistive Switching of GaAs Oxide NanostructuresVadim Avilov0Nikita Polupanov1Roman Tominov2Maxim Solodovnik3Boris Konoplev4Vladimir Smirnov5Oleg Ageev6Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInstitute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInstitute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInstitute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInstitute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInstitute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInstitute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaThe paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide with an impurity concentration of 5 × 10<sup>17</sup> cm<sup>−3</sup>. X-ray photoelectron spectroscopy measurements showed that GaAs oxide consists of oxide phases Ga<sub>2</sub>O<sub>3</sub> and As<sub>2</sub>O<sub>3</sub>, and the thickness of the Ga<sub>2</sub>O<sub>3</sub> layer is 2–3 times greater than the thickness of As<sub>2</sub>O<sub>3</sub> area—i.e., the oxidized GaAs region consists mainly of Ga<sub>2</sub>O<sub>3</sub>. The experimental studies of the influence of ONS thickness on the resistive switching effect were obtained. An increase in the ONS thickness from 0.8 ± 0.3 to 7.6 ± 0.6 nm leads to an increase in the switching voltage <i>Uset</i> from 2.8 ± 0.3 to 6.8 ± 0.9 V. The results can be used in the development of technological processes for the manufacturing of nano-electronic elements, such as ReRAM, as well as a high-efficiency quantum dot laser.https://www.mdpi.com/1996-1944/13/16/3451atomic force microscopylocal anodic oxidationgallium arsenideoxide nanoscale structureprofiled nanoscale structureeffect of resistive switching |
| spellingShingle | Vadim Avilov Nikita Polupanov Roman Tominov Maxim Solodovnik Boris Konoplev Vladimir Smirnov Oleg Ageev Resistive Switching of GaAs Oxide Nanostructures Materials atomic force microscopy local anodic oxidation gallium arsenide oxide nanoscale structure profiled nanoscale structure effect of resistive switching |
| title | Resistive Switching of GaAs Oxide Nanostructures |
| title_full | Resistive Switching of GaAs Oxide Nanostructures |
| title_fullStr | Resistive Switching of GaAs Oxide Nanostructures |
| title_full_unstemmed | Resistive Switching of GaAs Oxide Nanostructures |
| title_short | Resistive Switching of GaAs Oxide Nanostructures |
| title_sort | resistive switching of gaas oxide nanostructures |
| topic | atomic force microscopy local anodic oxidation gallium arsenide oxide nanoscale structure profiled nanoscale structure effect of resistive switching |
| url | https://www.mdpi.com/1996-1944/13/16/3451 |
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