Resistive Switching of GaAs Oxide Nanostructures

Resistive Switching of GaAs Oxide Nanostructures

The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide wi...

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Bibliographic Details
Main Authors: Vadim Avilov, Nikita Polupanov, Roman Tominov, Maxim Solodovnik, Boris Konoplev, Vladimir Smirnov, Oleg Ageev
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Materials
Subjects:
atomic force microscopy
local anodic oxidation
gallium arsenide
oxide nanoscale structure
profiled nanoscale structure
effect of resistive switching
Online Access:https://www.mdpi.com/1996-1944/13/16/3451

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https://www.mdpi.com/1996-1944/13/16/3451

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