Novel carbon nanotube model for low energy loss field-effect transistor
Carbon nanotube (CNT) shows excellent and novel performances in the field of electrical engineering. The electrical properties of CNT consist of exceptional behaviour that will help to manufacture very tiny semiconductor device. However, due to the lack of research, CNT is still competing with the s...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2017-01-01
|
| Series: | Cogent Engineering |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/23311916.2017.1300082 |
| _version_ | 1797705111512809472 |
|---|---|
| author | Soheli Farhana |
| author_facet | Soheli Farhana |
| author_sort | Soheli Farhana |
| collection | DOAJ |
| description | Carbon nanotube (CNT) shows excellent and novel performances in the field of electrical engineering. The electrical properties of CNT consist of exceptional behaviour that will help to manufacture very tiny semiconductor device. However, due to the lack of research, CNT is still competing with the silicon material in the semiconductor industry. In this research, a single walled CNT wrapping diameter of 1.95 nm is proposed such a way that it performs low energy consumption while it is acting as a channel material of a field-effect transistor. A set of electrical properties of CNT is analyzed to propose a novel model of the nanotube that exhibits low energy consumption compare to other electronics devices. Finally the CNT has been replaced with the silicon in the channel of a field-effect transistor that shows low energy consumption. |
| first_indexed | 2024-03-12T05:30:37Z |
| format | Article |
| id | doaj.art-3a3032619cd84e6893a3d9c390e6825a |
| institution | Directory Open Access Journal |
| issn | 2331-1916 |
| language | English |
| last_indexed | 2024-03-12T05:30:37Z |
| publishDate | 2017-01-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Cogent Engineering |
| spelling | doaj.art-3a3032619cd84e6893a3d9c390e6825a2023-09-03T06:53:42ZengTaylor & Francis GroupCogent Engineering2331-19162017-01-014110.1080/23311916.2017.13000821300082Novel carbon nanotube model for low energy loss field-effect transistorSoheli Farhana0International Islamic University MalaysiaCarbon nanotube (CNT) shows excellent and novel performances in the field of electrical engineering. The electrical properties of CNT consist of exceptional behaviour that will help to manufacture very tiny semiconductor device. However, due to the lack of research, CNT is still competing with the silicon material in the semiconductor industry. In this research, a single walled CNT wrapping diameter of 1.95 nm is proposed such a way that it performs low energy consumption while it is acting as a channel material of a field-effect transistor. A set of electrical properties of CNT is analyzed to propose a novel model of the nanotube that exhibits low energy consumption compare to other electronics devices. Finally the CNT has been replaced with the silicon in the channel of a field-effect transistor that shows low energy consumption.http://dx.doi.org/10.1080/23311916.2017.1300082carbon nanotubesizediametermodelingcntfet |
| spellingShingle | Soheli Farhana Novel carbon nanotube model for low energy loss field-effect transistor Cogent Engineering carbon nanotube size diameter modeling cntfet |
| title | Novel carbon nanotube model for low energy loss field-effect transistor |
| title_full | Novel carbon nanotube model for low energy loss field-effect transistor |
| title_fullStr | Novel carbon nanotube model for low energy loss field-effect transistor |
| title_full_unstemmed | Novel carbon nanotube model for low energy loss field-effect transistor |
| title_short | Novel carbon nanotube model for low energy loss field-effect transistor |
| title_sort | novel carbon nanotube model for low energy loss field effect transistor |
| topic | carbon nanotube size diameter modeling cntfet |
| url | http://dx.doi.org/10.1080/23311916.2017.1300082 |
| work_keys_str_mv | AT sohelifarhana novelcarbonnanotubemodelforlowenergylossfieldeffecttransistor |