| Summary: | With the increase in applications of the millimeter wave spectrum for phased array radar systems, mobile 7–13 communication systems, and satellite systems, the demand for a wideband, high-efficiency, high-power monolithic microwave integrated circuit (MMIC) power amplifier (PA) is increasing. In this paper, a 7–13 GHz 10 W high-efficiency MMIC PA is designed. This amplifier consists of a two-stage circuit structure with two high electron mobility transistor (HEMT) cells for the driver stage and four HEMT cells for the power stage. To ensure high efficiency and a certain output power (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>P</mi><mrow><mi>o</mi><mi>u</mi><mi>t</mi></mrow></msub></mrow></semantics></math></inline-formula>), both the driver–stage and power–stage transistors use a deep Class–AB bias. At the same time, in order to further improve the efficiency, low-loss and second–harmonic tuning techniques are used in the output and inter-stage matching networks, respectively. Finally, the electromagnetic simulation results show that within a frequency of 7–13 GHz, the amplifier achieves an average saturated continuous wave (CW) <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>P</mi><mrow><mi>o</mi><mi>u</mi><mi>t</mi></mrow></msub></mrow></semantics></math></inline-formula> of 40 dBm, a small signal gain of 14.5–15.5 dB, a power-added efficiency (PAE) of 30–46%, and the input and output return loss are better than 5 dB and 8 dB, respectively.
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