A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process
With the increase in applications of the millimeter wave spectrum for phased array radar systems, mobile 7–13 communication systems, and satellite systems, the demand for a wideband, high-efficiency, high-power monolithic microwave integrated circuit (MMIC) power amplifier (PA) is increasing. In thi...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-10-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/12/21/10872 |
| _version_ | 1797469263445884928 |
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| author | Aizhen Hu Yongqing Leng Xin Qiu Tongyao Luan Yatao Peng |
| author_facet | Aizhen Hu Yongqing Leng Xin Qiu Tongyao Luan Yatao Peng |
| author_sort | Aizhen Hu |
| collection | DOAJ |
| description | With the increase in applications of the millimeter wave spectrum for phased array radar systems, mobile 7–13 communication systems, and satellite systems, the demand for a wideband, high-efficiency, high-power monolithic microwave integrated circuit (MMIC) power amplifier (PA) is increasing. In this paper, a 7–13 GHz 10 W high-efficiency MMIC PA is designed. This amplifier consists of a two-stage circuit structure with two high electron mobility transistor (HEMT) cells for the driver stage and four HEMT cells for the power stage. To ensure high efficiency and a certain output power (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>P</mi><mrow><mi>o</mi><mi>u</mi><mi>t</mi></mrow></msub></mrow></semantics></math></inline-formula>), both the driver–stage and power–stage transistors use a deep Class–AB bias. At the same time, in order to further improve the efficiency, low-loss and second–harmonic tuning techniques are used in the output and inter-stage matching networks, respectively. Finally, the electromagnetic simulation results show that within a frequency of 7–13 GHz, the amplifier achieves an average saturated continuous wave (CW) <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>P</mi><mrow><mi>o</mi><mi>u</mi><mi>t</mi></mrow></msub></mrow></semantics></math></inline-formula> of 40 dBm, a small signal gain of 14.5–15.5 dB, a power-added efficiency (PAE) of 30–46%, and the input and output return loss are better than 5 dB and 8 dB, respectively. |
| first_indexed | 2024-03-09T19:17:55Z |
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| id | doaj.art-3a338450b6c94f0a919039fe07f4f237 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T19:17:55Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-3a338450b6c94f0a919039fe07f4f2372023-11-24T03:34:15ZengMDPI AGApplied Sciences2076-34172022-10-0112211087210.3390/app122110872A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT ProcessAizhen Hu0Yongqing Leng1Xin Qiu2Tongyao Luan3Yatao Peng4Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaThe State Key Laboratory of Analog and Mixed-Signal VLSI, Department of ECE, Faculty of Science and Technology, University of Macau, Taipa, Macao 999078, ChinaWith the increase in applications of the millimeter wave spectrum for phased array radar systems, mobile 7–13 communication systems, and satellite systems, the demand for a wideband, high-efficiency, high-power monolithic microwave integrated circuit (MMIC) power amplifier (PA) is increasing. In this paper, a 7–13 GHz 10 W high-efficiency MMIC PA is designed. This amplifier consists of a two-stage circuit structure with two high electron mobility transistor (HEMT) cells for the driver stage and four HEMT cells for the power stage. To ensure high efficiency and a certain output power (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>P</mi><mrow><mi>o</mi><mi>u</mi><mi>t</mi></mrow></msub></mrow></semantics></math></inline-formula>), both the driver–stage and power–stage transistors use a deep Class–AB bias. At the same time, in order to further improve the efficiency, low-loss and second–harmonic tuning techniques are used in the output and inter-stage matching networks, respectively. Finally, the electromagnetic simulation results show that within a frequency of 7–13 GHz, the amplifier achieves an average saturated continuous wave (CW) <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>P</mi><mrow><mi>o</mi><mi>u</mi><mi>t</mi></mrow></msub></mrow></semantics></math></inline-formula> of 40 dBm, a small signal gain of 14.5–15.5 dB, a power-added efficiency (PAE) of 30–46%, and the input and output return loss are better than 5 dB and 8 dB, respectively.https://www.mdpi.com/2076-3417/12/21/10872high efficiencypower amplifier7–13 GHzmonolithic microwave integrated circuittwo-stage |
| spellingShingle | Aizhen Hu Yongqing Leng Xin Qiu Tongyao Luan Yatao Peng A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process Applied Sciences high efficiency power amplifier 7–13 GHz monolithic microwave integrated circuit two-stage |
| title | A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process |
| title_full | A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process |
| title_fullStr | A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process |
| title_full_unstemmed | A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process |
| title_short | A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process |
| title_sort | 7 13 ghz 10 w high efficiency mmic power amplifier in 0 25 µm gan hemt process |
| topic | high efficiency power amplifier 7–13 GHz monolithic microwave integrated circuit two-stage |
| url | https://www.mdpi.com/2076-3417/12/21/10872 |
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