Structure and chemical composition of grain boundaries in the magnetic semiconductor GaSb<Mn>
The structure and chemical composition of grain boundaries in GaSb<Mn> magnetic semiconductors have been investigated. We determined that quenching of the GaSb melt with 2% Mn results in the formation of a textured polycrystal (111). The grain boundaries of the texture are formed by split 60 d...
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| Format: | Article |
| Language: | English |
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Voronezh State University
2021-09-01
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| Series: | Конденсированные среды и межфазные границы |
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| Online Access: | https://journals.vsu.ru/kcmf/article/view/3533 |
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| author | Vladimir P. Sanygin Olga N. Pashkova Alexander D. Izotov |
| author_facet | Vladimir P. Sanygin Olga N. Pashkova Alexander D. Izotov |
| author_sort | Vladimir P. Sanygin |
| collection | DOAJ |
| description | The structure and chemical composition of grain boundaries in GaSb<Mn> magnetic semiconductors have been investigated. We determined that quenching of the GaSb melt with 2% Mn results in the formation of a textured polycrystal (111). The grain boundaries of the texture are formed by split 60 degree dislocations with <110> dislocation lines. Microinclusions based on the ferromagnetic compound MnSb are located on the stacking faults of split dislocations. The chemical compositions of microinclusions differ, but their average composition is close to Mn1.1Sb. The synthesized GaSb<Mn> is a soft ferromagnet with a coercive force of 10 Oe and a magnetic state approaching superparamagnetic |
| first_indexed | 2024-12-22T06:52:11Z |
| format | Article |
| id | doaj.art-3a762eb649364d44a473e0303c0a9744 |
| institution | Directory Open Access Journal |
| issn | 1606-867X |
| language | English |
| last_indexed | 2024-12-22T06:52:11Z |
| publishDate | 2021-09-01 |
| publisher | Voronezh State University |
| record_format | Article |
| series | Конденсированные среды и межфазные границы |
| spelling | doaj.art-3a762eb649364d44a473e0303c0a97442022-12-21T18:35:06ZengVoronezh State UniversityКонденсированные среды и межфазные границы1606-867X2021-09-0123310.17308/kcmf.2021.23/3533Structure and chemical composition of grain boundaries in the magnetic semiconductor GaSb<Mn>Vladimir P. Sanygin0https://orcid.org/0000-0002-1261-6895Olga N. Pashkova1https://orcid.org/0000-0002-2102-1025Alexander D. Izotov2https://orcid.org/0000-0002-4639-3415Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian FederationKurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian FederationKurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian FederationThe structure and chemical composition of grain boundaries in GaSb<Mn> magnetic semiconductors have been investigated. We determined that quenching of the GaSb melt with 2% Mn results in the formation of a textured polycrystal (111). The grain boundaries of the texture are formed by split 60 degree dislocations with <110> dislocation lines. Microinclusions based on the ferromagnetic compound MnSb are located on the stacking faults of split dislocations. The chemical compositions of microinclusions differ, but their average composition is close to Mn1.1Sb. The synthesized GaSb<Mn> is a soft ferromagnet with a coercive force of 10 Oe and a magnetic state approaching superparamagnetichttps://journals.vsu.ru/kcmf/article/view/3533magnetic semiconductorsgallium antimonidecrystal lattice defectsmagnetic clusters |
| spellingShingle | Vladimir P. Sanygin Olga N. Pashkova Alexander D. Izotov Structure and chemical composition of grain boundaries in the magnetic semiconductor GaSb<Mn> Конденсированные среды и межфазные границы magnetic semiconductors gallium antimonide crystal lattice defects magnetic clusters |
| title | Structure and chemical composition of grain boundaries in the magnetic semiconductor GaSb<Mn> |
| title_full | Structure and chemical composition of grain boundaries in the magnetic semiconductor GaSb<Mn> |
| title_fullStr | Structure and chemical composition of grain boundaries in the magnetic semiconductor GaSb<Mn> |
| title_full_unstemmed | Structure and chemical composition of grain boundaries in the magnetic semiconductor GaSb<Mn> |
| title_short | Structure and chemical composition of grain boundaries in the magnetic semiconductor GaSb<Mn> |
| title_sort | structure and chemical composition of grain boundaries in the magnetic semiconductor gasb mn |
| topic | magnetic semiconductors gallium antimonide crystal lattice defects magnetic clusters |
| url | https://journals.vsu.ru/kcmf/article/view/3533 |
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