Calculation of light transistor structural parameters based on InGaN – AlGaN heterostructure
The article is devoted to study of building possibility of digital conversion systems based on new optoelectronic principles, which allow to expand the frequency range of conversion, as well as to increase the conversion capacity, thereby increasing the accuracy. The structural parameters of emittin...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2020-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | https://www.matec-conferences.org/articles/matecconf/pdf/2020/25/matecconf_icmtmte2020_03079.pdf |
| Summary: | The article is devoted to study of building possibility of digital conversion systems based on new optoelectronic principles, which allow to expand the frequency range of conversion, as well as to increase the conversion capacity, thereby increasing the accuracy. The structural parameters of emitting p-n junction for a light-emitting transistor based on p-InGaN – n-AlGaN heterostructure have been investigated. |
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| ISSN: | 2261-236X |