Calculation of light transistor structural parameters based on InGaN – AlGaN heterostructure
The article is devoted to study of building possibility of digital conversion systems based on new optoelectronic principles, which allow to expand the frequency range of conversion, as well as to increase the conversion capacity, thereby increasing the accuracy. The structural parameters of emittin...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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EDP Sciences
2020-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | https://www.matec-conferences.org/articles/matecconf/pdf/2020/25/matecconf_icmtmte2020_03079.pdf |
| _version_ | 1819297593558040576 |
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| author | Bushuev Artem Zolotov Artem Chkalov Ruslan |
| author_facet | Bushuev Artem Zolotov Artem Chkalov Ruslan |
| author_sort | Bushuev Artem |
| collection | DOAJ |
| description | The article is devoted to study of building possibility of digital conversion systems based on new optoelectronic principles, which allow to expand the frequency range of conversion, as well as to increase the conversion capacity, thereby increasing the accuracy. The structural parameters of emitting p-n junction for a light-emitting transistor based on p-InGaN – n-AlGaN heterostructure have been investigated. |
| first_indexed | 2024-12-24T05:16:28Z |
| format | Article |
| id | doaj.art-3a7afc04d8ec4be6bc501b7cbb752335 |
| institution | Directory Open Access Journal |
| issn | 2261-236X |
| language | English |
| last_indexed | 2024-12-24T05:16:28Z |
| publishDate | 2020-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | MATEC Web of Conferences |
| spelling | doaj.art-3a7afc04d8ec4be6bc501b7cbb7523352022-12-21T17:13:33ZengEDP SciencesMATEC Web of Conferences2261-236X2020-01-013290307910.1051/matecconf/202032903079matecconf_icmtmte2020_03079Calculation of light transistor structural parameters based on InGaN – AlGaN heterostructureBushuev ArtemZolotov ArtemChkalov RuslanThe article is devoted to study of building possibility of digital conversion systems based on new optoelectronic principles, which allow to expand the frequency range of conversion, as well as to increase the conversion capacity, thereby increasing the accuracy. The structural parameters of emitting p-n junction for a light-emitting transistor based on p-InGaN – n-AlGaN heterostructure have been investigated.https://www.matec-conferences.org/articles/matecconf/pdf/2020/25/matecconf_icmtmte2020_03079.pdf |
| spellingShingle | Bushuev Artem Zolotov Artem Chkalov Ruslan Calculation of light transistor structural parameters based on InGaN – AlGaN heterostructure MATEC Web of Conferences |
| title | Calculation of light transistor structural parameters based on InGaN – AlGaN heterostructure |
| title_full | Calculation of light transistor structural parameters based on InGaN – AlGaN heterostructure |
| title_fullStr | Calculation of light transistor structural parameters based on InGaN – AlGaN heterostructure |
| title_full_unstemmed | Calculation of light transistor structural parameters based on InGaN – AlGaN heterostructure |
| title_short | Calculation of light transistor structural parameters based on InGaN – AlGaN heterostructure |
| title_sort | calculation of light transistor structural parameters based on ingan algan heterostructure |
| url | https://www.matec-conferences.org/articles/matecconf/pdf/2020/25/matecconf_icmtmte2020_03079.pdf |
| work_keys_str_mv | AT bushuevartem calculationoflighttransistorstructuralparametersbasedoninganalganheterostructure AT zolotovartem calculationoflighttransistorstructuralparametersbasedoninganalganheterostructure AT chkalovruslan calculationoflighttransistorstructuralparametersbasedoninganalganheterostructure |