Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation

In recent years, the investigation of the complex interplay between the nanostructure and photo-transport mechanisms has become of crucial importance for the development of many emerging photovoltaic technologies. In this context, Kelvin probe force microscopy under frequency-modulated excitation ha...

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Main Authors: Pablo A. Fernández Garrillo, Benjamin Grévin, Łukasz Borowik
Format: Article
Language:English
Published: Beilstein-Institut 2018-06-01
Series:Beilstein Journal of Nanotechnology
Subjects:
Online Access:https://doi.org/10.3762/bjnano.9.175
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author Pablo A. Fernández Garrillo
Benjamin Grévin
Łukasz Borowik
author_facet Pablo A. Fernández Garrillo
Benjamin Grévin
Łukasz Borowik
author_sort Pablo A. Fernández Garrillo
collection DOAJ
description In recent years, the investigation of the complex interplay between the nanostructure and photo-transport mechanisms has become of crucial importance for the development of many emerging photovoltaic technologies. In this context, Kelvin probe force microscopy under frequency-modulated excitation has emerged as a useful technique for probing photo-carrier dynamics and gaining access to carrier lifetime at the nanoscale in a wide range of photovoltaic materials. However, some aspects about the data interpretation of techniques based on this approach are still the subject of debate, for example, the plausible presence of capacitance artifacts. Special attention shall also be given to the mathematical model used in the data-fitting process as it constitutes a determining aspect in the calculation of time constants. Here, we propose and demonstrate an automatic numerical simulation routine that enables to predict the behavior of spectroscopy curves of the average surface photovoltage as a function of a frequency-modulated excitation source in photovoltaic materials, enabling to compare simulations and experimental results. We describe the general aspects of this simulation routine and we compare it against experimental results previously obtained using single-point Kelvin probe force microscopy under frequency-modulated excitation over a silicon nanocrystal solar cell, as well as against results obtained by intensity-modulated scanning Kelvin probe microscopy over a polymer/fullerene bulk heterojunction device. Moreover, we show how this simulation routine can complement experimental results as additional information about the photo-carrier dynamics of the sample can be gained via the numerical analysis.
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spelling doaj.art-3ae2af990cb1459b90f458d2c2b85fea2022-12-21T19:19:20ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862018-06-01911834184310.3762/bjnano.9.1752190-4286-9-175Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitationPablo A. Fernández Garrillo0Benjamin Grévin1Łukasz Borowik2Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, FranceUniv. Grenoble Alpes, CNRS, CEA, INAC, SYMNES, 38000 Grenoble, FranceUniv. Grenoble Alpes, CEA, LETI, 38000 Grenoble, FranceIn recent years, the investigation of the complex interplay between the nanostructure and photo-transport mechanisms has become of crucial importance for the development of many emerging photovoltaic technologies. In this context, Kelvin probe force microscopy under frequency-modulated excitation has emerged as a useful technique for probing photo-carrier dynamics and gaining access to carrier lifetime at the nanoscale in a wide range of photovoltaic materials. However, some aspects about the data interpretation of techniques based on this approach are still the subject of debate, for example, the plausible presence of capacitance artifacts. Special attention shall also be given to the mathematical model used in the data-fitting process as it constitutes a determining aspect in the calculation of time constants. Here, we propose and demonstrate an automatic numerical simulation routine that enables to predict the behavior of spectroscopy curves of the average surface photovoltage as a function of a frequency-modulated excitation source in photovoltaic materials, enabling to compare simulations and experimental results. We describe the general aspects of this simulation routine and we compare it against experimental results previously obtained using single-point Kelvin probe force microscopy under frequency-modulated excitation over a silicon nanocrystal solar cell, as well as against results obtained by intensity-modulated scanning Kelvin probe microscopy over a polymer/fullerene bulk heterojunction device. Moreover, we show how this simulation routine can complement experimental results as additional information about the photo-carrier dynamics of the sample can be gained via the numerical analysis.https://doi.org/10.3762/bjnano.9.175carrier dynamicscarrier lifetimecarrier recombinationKelvin probe force microscopynanostructured photovoltaicsnumerical simulationsphoto-carrier dynamics
spellingShingle Pablo A. Fernández Garrillo
Benjamin Grévin
Łukasz Borowik
Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation
Beilstein Journal of Nanotechnology
carrier dynamics
carrier lifetime
carrier recombination
Kelvin probe force microscopy
nanostructured photovoltaics
numerical simulations
photo-carrier dynamics
title Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation
title_full Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation
title_fullStr Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation
title_full_unstemmed Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation
title_short Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation
title_sort numerical analysis of single point spectroscopy curves used in photo carrier dynamics measurements by kelvin probe force microscopy under frequency modulated excitation
topic carrier dynamics
carrier lifetime
carrier recombination
Kelvin probe force microscopy
nanostructured photovoltaics
numerical simulations
photo-carrier dynamics
url https://doi.org/10.3762/bjnano.9.175
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