An Extended Kolmogorov–Avrami–Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrystalline-Ferroelectric-Gate Field-Effect Transistors

An Extended Kolmogorov–Avrami–Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrystalline-Ferroelectric-Gate Field-Effect Transistors

A physics-based model on polarization switching in ferroelectric polycrystalline films is proposed. The calculation results by the model agree well with experimental results regarding dynamic operations of ferroelectric-gate field-effect transistors (FeFETs). In the model, an angle <i>θ</i&...

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Bibliographic Details
Main Authors: Shigeki Sakai, Mitsue Takahashi
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Materials
Subjects:
ferroelectric
dynamic model
polarization switching
domain wall
ferroelectric field-effect transistor
polycrystal
Online Access:https://www.mdpi.com/1996-1944/17/5/1077

Internet

https://www.mdpi.com/1996-1944/17/5/1077

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