A High Isolation Series-Shunt RF MEMS Switch

This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24....

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Main Authors: Yi Shi, Shi-Xing Jia, Jian Zhu, Yuan-Wei Yu
Format: Article
Language:English
Published: MDPI AG 2009-06-01
Series:Sensors
Subjects:
Online Access:http://www.mdpi.com/1424-8220/9/6/4455/
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author Yi Shi
Shi-Xing Jia
Jian Zhu
Yuan-Wei Yu
author_facet Yi Shi
Shi-Xing Jia
Jian Zhu
Yuan-Wei Yu
author_sort Yi Shi
collection DOAJ
description This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 µs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm.
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spelling doaj.art-3aebc0abcba14928a290fa07c592504d2022-12-22T02:20:26ZengMDPI AGSensors1424-82202009-06-01964455446410.3390/s90604455A High Isolation Series-Shunt RF MEMS SwitchYi ShiShi-Xing JiaJian ZhuYuan-Wei YuThis paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 µs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm.http://www.mdpi.com/1424-8220/9/6/4455/series-shuntRF MEMS switchmetal-contactelectrical model
spellingShingle Yi Shi
Shi-Xing Jia
Jian Zhu
Yuan-Wei Yu
A High Isolation Series-Shunt RF MEMS Switch
Sensors
series-shunt
RF MEMS switch
metal-contact
electrical model
title A High Isolation Series-Shunt RF MEMS Switch
title_full A High Isolation Series-Shunt RF MEMS Switch
title_fullStr A High Isolation Series-Shunt RF MEMS Switch
title_full_unstemmed A High Isolation Series-Shunt RF MEMS Switch
title_short A High Isolation Series-Shunt RF MEMS Switch
title_sort high isolation series shunt rf mems switch
topic series-shunt
RF MEMS switch
metal-contact
electrical model
url http://www.mdpi.com/1424-8220/9/6/4455/
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