A High Isolation Series-Shunt RF MEMS Switch
This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24....
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Format: | Article |
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MDPI AG
2009-06-01
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Series: | Sensors |
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Online Access: | http://www.mdpi.com/1424-8220/9/6/4455/ |
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author | Yi Shi Shi-Xing Jia Jian Zhu Yuan-Wei Yu |
author_facet | Yi Shi Shi-Xing Jia Jian Zhu Yuan-Wei Yu |
author_sort | Yi Shi |
collection | DOAJ |
description | This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 µs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm. |
first_indexed | 2024-04-14T01:26:04Z |
format | Article |
id | doaj.art-3aebc0abcba14928a290fa07c592504d |
institution | Directory Open Access Journal |
issn | 1424-8220 |
language | English |
last_indexed | 2024-04-14T01:26:04Z |
publishDate | 2009-06-01 |
publisher | MDPI AG |
record_format | Article |
series | Sensors |
spelling | doaj.art-3aebc0abcba14928a290fa07c592504d2022-12-22T02:20:26ZengMDPI AGSensors1424-82202009-06-01964455446410.3390/s90604455A High Isolation Series-Shunt RF MEMS SwitchYi ShiShi-Xing JiaJian ZhuYuan-Wei YuThis paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 µs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm.http://www.mdpi.com/1424-8220/9/6/4455/series-shuntRF MEMS switchmetal-contactelectrical model |
spellingShingle | Yi Shi Shi-Xing Jia Jian Zhu Yuan-Wei Yu A High Isolation Series-Shunt RF MEMS Switch Sensors series-shunt RF MEMS switch metal-contact electrical model |
title | A High Isolation Series-Shunt RF MEMS Switch |
title_full | A High Isolation Series-Shunt RF MEMS Switch |
title_fullStr | A High Isolation Series-Shunt RF MEMS Switch |
title_full_unstemmed | A High Isolation Series-Shunt RF MEMS Switch |
title_short | A High Isolation Series-Shunt RF MEMS Switch |
title_sort | high isolation series shunt rf mems switch |
topic | series-shunt RF MEMS switch metal-contact electrical model |
url | http://www.mdpi.com/1424-8220/9/6/4455/ |
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