Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide
<p>Abstract</p> <p>We report the first instance of deposition of preferentially oriented, nanocrystalline, and nanocolumnar strontium-doped lead zirconate titanate (PSZT) ferroelectric thin films directly on thermal silicon dioxide. No intermediate seed or activation layers were us...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
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SpringerOpen
2008-01-01
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Series: | Nanoscale Research Letters |
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Online Access: | http://dx.doi.org/10.1007/s11671-008-9197-2 |
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author | Mitchell DRG Sriram S Bhaskaran M Mitchell A Kostovski G |
author_facet | Mitchell DRG Sriram S Bhaskaran M Mitchell A Kostovski G |
author_sort | Mitchell DRG |
collection | DOAJ |
description | <p>Abstract</p> <p>We report the first instance of deposition of preferentially oriented, nanocrystalline, and nanocolumnar strontium-doped lead zirconate titanate (PSZT) ferroelectric thin films directly on thermal silicon dioxide. No intermediate seed or activation layers were used between PSZT and silicon dioxide. The deposited thin films have been characterised using a combination of diffraction and microscopy techniques.</p> |
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id | doaj.art-3b10cae383284e78856c54399d1df91f |
institution | Directory Open Access Journal |
issn | 1931-7573 1556-276X |
language | English |
last_indexed | 2024-03-12T18:44:32Z |
publishDate | 2008-01-01 |
publisher | SpringerOpen |
record_format | Article |
series | Nanoscale Research Letters |
spelling | doaj.art-3b10cae383284e78856c54399d1df91f2023-08-02T07:47:35ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2008-01-01412933Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon DioxideMitchell DRGSriram SBhaskaran MMitchell AKostovski G<p>Abstract</p> <p>We report the first instance of deposition of preferentially oriented, nanocrystalline, and nanocolumnar strontium-doped lead zirconate titanate (PSZT) ferroelectric thin films directly on thermal silicon dioxide. No intermediate seed or activation layers were used between PSZT and silicon dioxide. The deposited thin films have been characterised using a combination of diffraction and microscopy techniques.</p>http://dx.doi.org/10.1007/s11671-008-9197-2PSZT thin filmsSilicon dioxideNanocrystalXRDMicroscopy |
spellingShingle | Mitchell DRG Sriram S Bhaskaran M Mitchell A Kostovski G Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide Nanoscale Research Letters PSZT thin films Silicon dioxide Nanocrystal XRD Microscopy |
title | Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide |
title_full | Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide |
title_fullStr | Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide |
title_full_unstemmed | Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide |
title_short | Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide |
title_sort | nanocolumnar preferentially oriented pszt thin films deposited on thermally grown silicon dioxide |
topic | PSZT thin films Silicon dioxide Nanocrystal XRD Microscopy |
url | http://dx.doi.org/10.1007/s11671-008-9197-2 |
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