Reverse Leakage Current Transport Mechanisms in Ni&#x002F;Au Al<sub>0.58</sub>Ga<sub>0.42</sub>N Schottky Type Photodetectors

Reverse Leakage Current Transport Mechanisms in Ni&#x002F;Au Al<sub>0.58</sub>Ga<sub>0.42</sub>N Schottky Type Photodetectors

We successfully fabricated the Al<sub>0.58</sub>Ga<sub>0.42</sub>N-based solar-blind ultraviolet (UV) Schottky type photodetectors (PDs). The crystalline quality, morphology and dislocation information of the Al<sub>0.58</sub>Ga<sub>0.42</sub>N epitaxi...

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Bibliographic Details
Main Authors: Guofeng Yang, Yan Gu, Yushen Liu, Feng Xie, Yuhang Li, Xiumei Zhang, Naiyan Lu, Chun Zhu
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Photonics Journal
Subjects:
AlGaN
carrier transport
Schottky type
ultraviolet photodetectors
Online Access:https://ieeexplore.ieee.org/document/9465706/

Internet

https://ieeexplore.ieee.org/document/9465706/

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