Magnetic anisotropy of half-metallic Co2FeAl ultra-thin films epitaxially grown on GaAs(001)
Single crystalline Co2FeAl films with different thicknesses varying from 3.6 to 10.6 nm have been grown on GaAs (001) using Molecule Beam Epitaxy (MBE). The magnetic characteristics were investigated by in-situ magneto-optical Kerr effect (MOKE). For all the samples, the angle dependent magnetizatio...
| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5087227 |
| _version_ | 1818392457831776256 |
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| author | Bolin Lai Xiaoqian Zhang Xianyang Lu Long Yang Junlin Wang Yequan Chen Yafei Zhao Yao Li Xuezhong Ruan Xuefeng Wang Jun Du Wenqing Liu Fengqiu Wang Liang He Bo Liu Yongbing Xu |
| author_facet | Bolin Lai Xiaoqian Zhang Xianyang Lu Long Yang Junlin Wang Yequan Chen Yafei Zhao Yao Li Xuezhong Ruan Xuefeng Wang Jun Du Wenqing Liu Fengqiu Wang Liang He Bo Liu Yongbing Xu |
| author_sort | Bolin Lai |
| collection | DOAJ |
| description | Single crystalline Co2FeAl films with different thicknesses varying from 3.6 to 10.6 nm have been grown on GaAs (001) using Molecule Beam Epitaxy (MBE). The magnetic characteristics were investigated by in-situ magneto-optical Kerr effect (MOKE). For all the samples, the angle dependent magnetization energy has a relatively high and steep peak around [110] direction which is the hard axis, and a wide basin from [11¯0] to [100] which is the range of the easy axis. More interestingly, the magnetic anisotropy includes a strong uniaxial component due to the Co2FeAl/GaAs interface, a cubic one from Co2FeAl crystalline structure, and an unexpected localized anisotropy term around the [110] direction. All the three anisotropy components overlap their own hard axis around [110] direction resulting in a steep energy barrier, which leads to unusual inverted hysteresis loops around [110]. Our findings add a building block for using half-metallic Co2FeAl thin films in the application of magnetic storage devices. |
| first_indexed | 2024-12-14T05:29:44Z |
| format | Article |
| id | doaj.art-3c10d9b052924d5f88c41c679ac0d3bb |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-14T05:29:44Z |
| publishDate | 2019-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-3c10d9b052924d5f88c41c679ac0d3bb2022-12-21T23:15:23ZengAIP Publishing LLCAIP Advances2158-32262019-06-0196065002065002-510.1063/1.5087227009906ADVMagnetic anisotropy of half-metallic Co2FeAl ultra-thin films epitaxially grown on GaAs(001)Bolin Lai0Xiaoqian Zhang1Xianyang Lu2Long Yang3Junlin Wang4Yequan Chen5Yafei Zhao6Yao Li7Xuezhong Ruan8Xuefeng Wang9Jun Du10Wenqing Liu11Fengqiu Wang12Liang He13Bo Liu14Yongbing Xu15Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaYork-Nanjing Joint Centre (YNJC) for Spintronics and Nano Engineering, Department of Electronics, The University of York, YO10 3DD, United KingdomJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaZhejiang Hikstor Technology Co., Ltd., Hangzhou 311305, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaSingle crystalline Co2FeAl films with different thicknesses varying from 3.6 to 10.6 nm have been grown on GaAs (001) using Molecule Beam Epitaxy (MBE). The magnetic characteristics were investigated by in-situ magneto-optical Kerr effect (MOKE). For all the samples, the angle dependent magnetization energy has a relatively high and steep peak around [110] direction which is the hard axis, and a wide basin from [11¯0] to [100] which is the range of the easy axis. More interestingly, the magnetic anisotropy includes a strong uniaxial component due to the Co2FeAl/GaAs interface, a cubic one from Co2FeAl crystalline structure, and an unexpected localized anisotropy term around the [110] direction. All the three anisotropy components overlap their own hard axis around [110] direction resulting in a steep energy barrier, which leads to unusual inverted hysteresis loops around [110]. Our findings add a building block for using half-metallic Co2FeAl thin films in the application of magnetic storage devices.http://dx.doi.org/10.1063/1.5087227 |
| spellingShingle | Bolin Lai Xiaoqian Zhang Xianyang Lu Long Yang Junlin Wang Yequan Chen Yafei Zhao Yao Li Xuezhong Ruan Xuefeng Wang Jun Du Wenqing Liu Fengqiu Wang Liang He Bo Liu Yongbing Xu Magnetic anisotropy of half-metallic Co2FeAl ultra-thin films epitaxially grown on GaAs(001) AIP Advances |
| title | Magnetic anisotropy of half-metallic Co2FeAl ultra-thin films epitaxially grown on GaAs(001) |
| title_full | Magnetic anisotropy of half-metallic Co2FeAl ultra-thin films epitaxially grown on GaAs(001) |
| title_fullStr | Magnetic anisotropy of half-metallic Co2FeAl ultra-thin films epitaxially grown on GaAs(001) |
| title_full_unstemmed | Magnetic anisotropy of half-metallic Co2FeAl ultra-thin films epitaxially grown on GaAs(001) |
| title_short | Magnetic anisotropy of half-metallic Co2FeAl ultra-thin films epitaxially grown on GaAs(001) |
| title_sort | magnetic anisotropy of half metallic co2feal ultra thin films epitaxially grown on gaas 001 |
| url | http://dx.doi.org/10.1063/1.5087227 |
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