Reliable processing of graphene using metal etchmasks
<p>Abstract</p> <p>Graphene exhibits exciting properties which make it an appealing candidate for use in electronic devices. Reliable processes for device fabrication are crucial prerequisites for this. We developed a large area of CVD synthesis and transfer of graphene films. With...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/390 |
| _version_ | 1827843281661198336 |
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| author | Peltekis Nikos Lee Kangho Kim Hye-Young Kumar Shishir Duesberg Georg |
| author_facet | Peltekis Nikos Lee Kangho Kim Hye-Young Kumar Shishir Duesberg Georg |
| author_sort | Peltekis Nikos |
| collection | DOAJ |
| description | <p>Abstract</p> <p>Graphene exhibits exciting properties which make it an appealing candidate for use in electronic devices. Reliable processes for device fabrication are crucial prerequisites for this. We developed a large area of CVD synthesis and transfer of graphene films. With patterning of these graphene layers using standard photoresist masks, we are able to produce arrays of gated graphene devices with four point contacts. The etching and lift off process poses problems because of delamination and contamination due to polymer residues when using standard resists. We introduce a metal etch mask which minimises these problems. The high quality of graphene is shown by Raman and XPS spectroscopy as well as electrical measurements. The process is of high value for applications, as it improves the processability of graphene using high-throughput lithography and etching techniques.</p> |
| first_indexed | 2024-03-12T08:22:30Z |
| format | Article |
| id | doaj.art-3c199cccb41a4e78a039bdd5d66ed5d2 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T08:22:30Z |
| publishDate | 2011-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-3c199cccb41a4e78a039bdd5d66ed5d22023-09-02T18:17:25ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161390Reliable processing of graphene using metal etchmasksPeltekis NikosLee KanghoKim Hye-YoungKumar ShishirDuesberg Georg<p>Abstract</p> <p>Graphene exhibits exciting properties which make it an appealing candidate for use in electronic devices. Reliable processes for device fabrication are crucial prerequisites for this. We developed a large area of CVD synthesis and transfer of graphene films. With patterning of these graphene layers using standard photoresist masks, we are able to produce arrays of gated graphene devices with four point contacts. The etching and lift off process poses problems because of delamination and contamination due to polymer residues when using standard resists. We introduce a metal etch mask which minimises these problems. The high quality of graphene is shown by Raman and XPS spectroscopy as well as electrical measurements. The process is of high value for applications, as it improves the processability of graphene using high-throughput lithography and etching techniques.</p>http://www.nanoscalereslett.com/content/6/1/390 |
| spellingShingle | Peltekis Nikos Lee Kangho Kim Hye-Young Kumar Shishir Duesberg Georg Reliable processing of graphene using metal etchmasks Nanoscale Research Letters |
| title | Reliable processing of graphene using metal etchmasks |
| title_full | Reliable processing of graphene using metal etchmasks |
| title_fullStr | Reliable processing of graphene using metal etchmasks |
| title_full_unstemmed | Reliable processing of graphene using metal etchmasks |
| title_short | Reliable processing of graphene using metal etchmasks |
| title_sort | reliable processing of graphene using metal etchmasks |
| url | http://www.nanoscalereslett.com/content/6/1/390 |
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