Br Vacancy Defects Healed Perovskite Indoor Photovoltaic Modules with Certified Power Conversion Efficiency Exceeding 36%
Abstract Indoor photovoltaics (IPVs) are expected to power the Internet of Things ecosystem, which is attracting ever‐increasing attention as part of the rapidly developing distributed communications and electronics technology. The power conversion efficiency of IPVs strongly depends on the match be...
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-11-01
|
| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202204138 |
| _version_ | 1811179890984091648 |
|---|---|
| author | Cuiling Zhang Chong Liu Yanyan Gao Shusheng Zhu Fang Chen Boyuan Huang Yi Xie Yaqing Liu Mengen Ma Zhen Wang Shaohang Wu Ruud E. I. Schropp Yaohua Mai |
| author_facet | Cuiling Zhang Chong Liu Yanyan Gao Shusheng Zhu Fang Chen Boyuan Huang Yi Xie Yaqing Liu Mengen Ma Zhen Wang Shaohang Wu Ruud E. I. Schropp Yaohua Mai |
| author_sort | Cuiling Zhang |
| collection | DOAJ |
| description | Abstract Indoor photovoltaics (IPVs) are expected to power the Internet of Things ecosystem, which is attracting ever‐increasing attention as part of the rapidly developing distributed communications and electronics technology. The power conversion efficiency of IPVs strongly depends on the match between typical indoor light spectra and the band gap of the light absorbing layer. Therefore, band‐gap tunable materials, such as metal‐halide perovskites, are specifically promising candidates for approaching the indoor illumination efficiency limit of ∼56%. However, perovskite materials with ideal band gap for indoor application generally contain high bromine (Br) contents, causing inferior open‐circuit voltage (VOC). By fabricating a series of wide‐bandgap perovskites (Cs0.17FA0.83PbI3−xBrx, 0.6 ≤ x ≤ 1.6) with varying Br contents and related band gaps, it is found that, the high Br vacancy (VBr) defect density is a significant reason that leading to large VOC deficits apart from the well‐accepted halide segregation. The introduction of I‐rich alkali metal small‐molecule compounds is demonstrated to suppress the VBr and increase the VOC of perovskite IPVs up to 1.05 V under 1000 lux light‐emitting diode illumination, one of the highest VOC values reported so far. More importantly, the modules are sent for independent certification and have gained a record efficiency of 36.36%. |
| first_indexed | 2024-04-11T06:41:18Z |
| format | Article |
| id | doaj.art-3c44db21e8ad47119fef48d589588abf |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-04-11T06:41:18Z |
| publishDate | 2022-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-3c44db21e8ad47119fef48d589588abf2022-12-22T04:39:30ZengWileyAdvanced Science2198-38442022-11-01933n/an/a10.1002/advs.202204138Br Vacancy Defects Healed Perovskite Indoor Photovoltaic Modules with Certified Power Conversion Efficiency Exceeding 36%Cuiling Zhang0Chong Liu1Yanyan Gao2Shusheng Zhu3Fang Chen4Boyuan Huang5Yi Xie6Yaqing Liu7Mengen Ma8Zhen Wang9Shaohang Wu10Ruud E. I. Schropp11Yaohua Mai12Institute of New Energy Technology College of Information Science and Technology Guangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipment and Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes Jinan University Guangzhou 510632 ChinaInstitute of New Energy Technology College of Information Science and Technology Guangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipment and Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes Jinan University Guangzhou 510632 ChinaInstitute of New Energy Technology College of Information Science and Technology Guangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipment and Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes Jinan University Guangzhou 510632 ChinaInstitute of New Energy Technology College of Information Science and Technology Guangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipment and Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes Jinan University Guangzhou 510632 ChinaDepartment of Materials Science and Engineering Southern University of Science and Technology Shenzhen Guangdong 518055 ChinaDepartment of Materials Science and Engineering Southern University of Science and Technology Shenzhen Guangdong 518055 ChinaInstitute of New Energy Technology College of Information Science and Technology Guangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipment and Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes Jinan University Guangzhou 510632 ChinaInstitute of New Energy Technology College of Information Science and Technology Guangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipment and Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes Jinan University Guangzhou 510632 ChinaInstitute of New Energy Technology College of Information Science and Technology Guangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipment and Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes Jinan University Guangzhou 510632 ChinaInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 ChinaInstitute of New Energy Technology College of Information Science and Technology Guangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipment and Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes Jinan University Guangzhou 510632 ChinaInstitute of New Energy Technology College of Information Science and Technology Guangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipment and Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes Jinan University Guangzhou 510632 ChinaInstitute of New Energy Technology College of Information Science and Technology Guangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipment and Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes Jinan University Guangzhou 510632 ChinaAbstract Indoor photovoltaics (IPVs) are expected to power the Internet of Things ecosystem, which is attracting ever‐increasing attention as part of the rapidly developing distributed communications and electronics technology. The power conversion efficiency of IPVs strongly depends on the match between typical indoor light spectra and the band gap of the light absorbing layer. Therefore, band‐gap tunable materials, such as metal‐halide perovskites, are specifically promising candidates for approaching the indoor illumination efficiency limit of ∼56%. However, perovskite materials with ideal band gap for indoor application generally contain high bromine (Br) contents, causing inferior open‐circuit voltage (VOC). By fabricating a series of wide‐bandgap perovskites (Cs0.17FA0.83PbI3−xBrx, 0.6 ≤ x ≤ 1.6) with varying Br contents and related band gaps, it is found that, the high Br vacancy (VBr) defect density is a significant reason that leading to large VOC deficits apart from the well‐accepted halide segregation. The introduction of I‐rich alkali metal small‐molecule compounds is demonstrated to suppress the VBr and increase the VOC of perovskite IPVs up to 1.05 V under 1000 lux light‐emitting diode illumination, one of the highest VOC values reported so far. More importantly, the modules are sent for independent certification and have gained a record efficiency of 36.36%.https://doi.org/10.1002/advs.202204138Br vacancy defectindoor photovoltaic cellsmodulewide‐bandgap perovskites |
| spellingShingle | Cuiling Zhang Chong Liu Yanyan Gao Shusheng Zhu Fang Chen Boyuan Huang Yi Xie Yaqing Liu Mengen Ma Zhen Wang Shaohang Wu Ruud E. I. Schropp Yaohua Mai Br Vacancy Defects Healed Perovskite Indoor Photovoltaic Modules with Certified Power Conversion Efficiency Exceeding 36% Advanced Science Br vacancy defect indoor photovoltaic cells module wide‐bandgap perovskites |
| title | Br Vacancy Defects Healed Perovskite Indoor Photovoltaic Modules with Certified Power Conversion Efficiency Exceeding 36% |
| title_full | Br Vacancy Defects Healed Perovskite Indoor Photovoltaic Modules with Certified Power Conversion Efficiency Exceeding 36% |
| title_fullStr | Br Vacancy Defects Healed Perovskite Indoor Photovoltaic Modules with Certified Power Conversion Efficiency Exceeding 36% |
| title_full_unstemmed | Br Vacancy Defects Healed Perovskite Indoor Photovoltaic Modules with Certified Power Conversion Efficiency Exceeding 36% |
| title_short | Br Vacancy Defects Healed Perovskite Indoor Photovoltaic Modules with Certified Power Conversion Efficiency Exceeding 36% |
| title_sort | br vacancy defects healed perovskite indoor photovoltaic modules with certified power conversion efficiency exceeding 36 |
| topic | Br vacancy defect indoor photovoltaic cells module wide‐bandgap perovskites |
| url | https://doi.org/10.1002/advs.202204138 |
| work_keys_str_mv | AT cuilingzhang brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 AT chongliu brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 AT yanyangao brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 AT shushengzhu brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 AT fangchen brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 AT boyuanhuang brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 AT yixie brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 AT yaqingliu brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 AT mengenma brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 AT zhenwang brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 AT shaohangwu brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 AT ruudeischropp brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 AT yaohuamai brvacancydefectshealedperovskiteindoorphotovoltaicmoduleswithcertifiedpowerconversionefficiencyexceeding36 |