Modeling the Displacement Damage on Trigger Current of Anode-Short MOS-Controlled Thyristor
The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capability. The anode short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which develops a normally-off characteristic. As a composite structure made...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9201480/ |