Spinristor: A Spin‐Filtering Memristor

Abstract In this paper, an in silico proof of concept of a spinristor is proposed and provided; a new electronic component that combines a spin‐filter and a memristor in a single molecule, useful for in‐memory processing. It builds on the idea of an open‐shell transition metal ion enclosed within an...

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Main Authors: Adam Jaroš, Mahdi Sasar, Lucie Tučková, Esmaeil Farajpour Bonab, Zahra Badri, Michal Straka, Cina Foroutan‐Nejad
Format: Article
Language:English
Published: Wiley-VCH 2023-08-01
Series:Advanced Electronic Materials
Subjects:
Online Access:https://doi.org/10.1002/aelm.202300360
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author Adam Jaroš
Mahdi Sasar
Lucie Tučková
Esmaeil Farajpour Bonab
Zahra Badri
Michal Straka
Cina Foroutan‐Nejad
author_facet Adam Jaroš
Mahdi Sasar
Lucie Tučková
Esmaeil Farajpour Bonab
Zahra Badri
Michal Straka
Cina Foroutan‐Nejad
author_sort Adam Jaroš
collection DOAJ
description Abstract In this paper, an in silico proof of concept of a spinristor is proposed and provided; a new electronic component that combines a spin‐filter and a memristor in a single molecule, useful for in‐memory processing. It builds on the idea of an open‐shell transition metal ion enclosed within an elliptical fullerene connected to a pair of electrodes. The spin‐ and electronic‐polarization induced by the enclosed open‐shell metallic ion leads to differential rectification of the electrons at low voltages applied between the source–drain electrodes, VSD. The position of the encapsulated ion can be switched by a high VSD which leads to a change in the direction of the rectification and the spin‐filtering ratio. The system can thus be used as a switching rectifier, that is, a memristor and a spin‐filter; therefore, a spinristor. The effect of different linkers on the function of the proposed device is further analyzed to show that linkers reduce the overall conductivity by an order of magnitude, but improve the spin‐filtering ratio. The computations suggest that nitrile and isocyanide linkers enhance the rectification, too. To the best of the authors’ knowledge, spinristor has no macroscopic counterpart in electronics, so far.
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spelling doaj.art-3c780a7b0ddf4038b7f82857a89e7c522023-08-11T02:16:18ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-08-0198n/an/a10.1002/aelm.202300360Spinristor: A Spin‐Filtering MemristorAdam Jaroš0Mahdi Sasar1Lucie Tučková2Esmaeil Farajpour Bonab3Zahra Badri4Michal Straka5Cina Foroutan‐Nejad6Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences Flemingovo nám. 2 Prague CZ‐16610 Czech RepublicInstitute of Organic Chemistry Polish Academy of Sciences Kasprzaka 44/52 Warsaw 01‐224 PolandInstitute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences Flemingovo nám. 2 Prague CZ‐16610 Czech RepublicDepartment of Chemistry Faculty of Science Masaryk University Kamenice 5 Brno CZ‐62500 Czech RepublicInstitute of Organic Chemistry Polish Academy of Sciences Kasprzaka 44/52 Warsaw 01‐224 PolandInstitute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences Flemingovo nám. 2 Prague CZ‐16610 Czech RepublicInstitute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences Flemingovo nám. 2 Prague CZ‐16610 Czech RepublicAbstract In this paper, an in silico proof of concept of a spinristor is proposed and provided; a new electronic component that combines a spin‐filter and a memristor in a single molecule, useful for in‐memory processing. It builds on the idea of an open‐shell transition metal ion enclosed within an elliptical fullerene connected to a pair of electrodes. The spin‐ and electronic‐polarization induced by the enclosed open‐shell metallic ion leads to differential rectification of the electrons at low voltages applied between the source–drain electrodes, VSD. The position of the encapsulated ion can be switched by a high VSD which leads to a change in the direction of the rectification and the spin‐filtering ratio. The system can thus be used as a switching rectifier, that is, a memristor and a spin‐filter; therefore, a spinristor. The effect of different linkers on the function of the proposed device is further analyzed to show that linkers reduce the overall conductivity by an order of magnitude, but improve the spin‐filtering ratio. The computations suggest that nitrile and isocyanide linkers enhance the rectification, too. To the best of the authors’ knowledge, spinristor has no macroscopic counterpart in electronics, so far.https://doi.org/10.1002/aelm.202300360first‐principles computationsmemristorsnon‐equilibrium Green's functionspin filtersspinristors
spellingShingle Adam Jaroš
Mahdi Sasar
Lucie Tučková
Esmaeil Farajpour Bonab
Zahra Badri
Michal Straka
Cina Foroutan‐Nejad
Spinristor: A Spin‐Filtering Memristor
Advanced Electronic Materials
first‐principles computations
memristors
non‐equilibrium Green's function
spin filters
spinristors
title Spinristor: A Spin‐Filtering Memristor
title_full Spinristor: A Spin‐Filtering Memristor
title_fullStr Spinristor: A Spin‐Filtering Memristor
title_full_unstemmed Spinristor: A Spin‐Filtering Memristor
title_short Spinristor: A Spin‐Filtering Memristor
title_sort spinristor a spin filtering memristor
topic first‐principles computations
memristors
non‐equilibrium Green's function
spin filters
spinristors
url https://doi.org/10.1002/aelm.202300360
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AT esmaeilfarajpourbonab spinristoraspinfilteringmemristor
AT zahrabadri spinristoraspinfilteringmemristor
AT michalstraka spinristoraspinfilteringmemristor
AT cinaforoutannejad spinristoraspinfilteringmemristor