Dark Noise Suppression of NIR Response Enhanced Si-CMOS Sensor

We studied the effect of laser fluence on the dark noise performance of a laser-microstructured Si-based CMOS image sensor. The absorption characteristics and crystal properties of the microstructured sensor fabricated under different process conditions were investigated. Furthermore, a short-time e...

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Main Authors: Ke Wang, Chengxiang Peng, Zuoxun Hou
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Photonics
Subjects:
Online Access:https://www.mdpi.com/2304-6732/9/5/307
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author Ke Wang
Chengxiang Peng
Zuoxun Hou
author_facet Ke Wang
Chengxiang Peng
Zuoxun Hou
author_sort Ke Wang
collection DOAJ
description We studied the effect of laser fluence on the dark noise performance of a laser-microstructured Si-based CMOS image sensor. The absorption characteristics and crystal properties of the microstructured sensor fabricated under different process conditions were investigated. Furthermore, a short-time etching method capable of improving the electrical performance of the laser-microstructured sensor was proposed. By removing amorphous silicon (a-Si) containing a large number of defects in the photosensitive surface of the microstructured Si-based CMOS image sensor, the etching method can effectively suppress the dark noise of the laser-microstructured Si-photodetector while maintaining the near-infrared response enhancement effect of the Si-photodetector irradiated by fs-laser. The results of the near-infrared imaging test show that on the basis of imaging brightness enhancement, the contrast ratio of the image formed by the CMOS image sensor in the microstructured region etched by RIE under short exposure time is significantly improved.
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spelling doaj.art-3c7fe1fe2b764a989d46a786d372c3d32023-11-23T12:40:27ZengMDPI AGPhotonics2304-67322022-04-019530710.3390/photonics9050307Dark Noise Suppression of NIR Response Enhanced Si-CMOS SensorKe Wang0Chengxiang Peng1Zuoxun Hou2Beijing Institute of Space Mechanics & Electricity, Beijing 100094, ChinaBeijing Institute of Space Mechanics & Electricity, Beijing 100094, ChinaBeijing Institute of Space Mechanics & Electricity, Beijing 100094, ChinaWe studied the effect of laser fluence on the dark noise performance of a laser-microstructured Si-based CMOS image sensor. The absorption characteristics and crystal properties of the microstructured sensor fabricated under different process conditions were investigated. Furthermore, a short-time etching method capable of improving the electrical performance of the laser-microstructured sensor was proposed. By removing amorphous silicon (a-Si) containing a large number of defects in the photosensitive surface of the microstructured Si-based CMOS image sensor, the etching method can effectively suppress the dark noise of the laser-microstructured Si-photodetector while maintaining the near-infrared response enhancement effect of the Si-photodetector irradiated by fs-laser. The results of the near-infrared imaging test show that on the basis of imaging brightness enhancement, the contrast ratio of the image formed by the CMOS image sensor in the microstructured region etched by RIE under short exposure time is significantly improved.https://www.mdpi.com/2304-6732/9/5/307siliconsensorfemtosecond laserdark noise
spellingShingle Ke Wang
Chengxiang Peng
Zuoxun Hou
Dark Noise Suppression of NIR Response Enhanced Si-CMOS Sensor
Photonics
silicon
sensor
femtosecond laser
dark noise
title Dark Noise Suppression of NIR Response Enhanced Si-CMOS Sensor
title_full Dark Noise Suppression of NIR Response Enhanced Si-CMOS Sensor
title_fullStr Dark Noise Suppression of NIR Response Enhanced Si-CMOS Sensor
title_full_unstemmed Dark Noise Suppression of NIR Response Enhanced Si-CMOS Sensor
title_short Dark Noise Suppression of NIR Response Enhanced Si-CMOS Sensor
title_sort dark noise suppression of nir response enhanced si cmos sensor
topic silicon
sensor
femtosecond laser
dark noise
url https://www.mdpi.com/2304-6732/9/5/307
work_keys_str_mv AT kewang darknoisesuppressionofnirresponseenhancedsicmossensor
AT chengxiangpeng darknoisesuppressionofnirresponseenhancedsicmossensor
AT zuoxunhou darknoisesuppressionofnirresponseenhancedsicmossensor