Research and Analysis of MEMS Switches in Different Frequency Bands
Due to their high isolation, low insertion loss, high linearity, and low power consumption, microelectromechanical systems (MEMS) switches have drawn much attention from researchers in recent years. In this paper, we introduce the research status of MEMS switches in different bands and several relia...
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| Format: | Article |
| Language: | English |
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MDPI AG
2018-04-01
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| Series: | Micromachines |
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| Online Access: | http://www.mdpi.com/2072-666X/9/4/185 |
| _version_ | 1811208539956314112 |
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| author | Wenchao Tian Ping Li LinXiao Yuan |
| author_facet | Wenchao Tian Ping Li LinXiao Yuan |
| author_sort | Wenchao Tian |
| collection | DOAJ |
| description | Due to their high isolation, low insertion loss, high linearity, and low power consumption, microelectromechanical systems (MEMS) switches have drawn much attention from researchers in recent years. In this paper, we introduce the research status of MEMS switches in different bands and several reliability issues, such as dielectric charging, contact failure, and temperature instability. In this paper, some of the following methods to improve the performance of MEMS switches in high frequency are summarized: (1) utilizing combinations of several switches in series; (2) covering a float metal layer on the dielectric layer; (3) using dielectric layer materials with high dielectric constants and conductor materials with low resistance; (4) developing MEMS switches using T-match and π-match; (5) designing MEMS switches based on bipolar complementary metal–oxide–semiconductor (BiCMOS) technology and reconfigurable MEMS’ surfaces; (6) employing thermal compensation structures, circularly symmetric structures, thermal buckle-beam actuators, molybdenum membrane, and thin-film packaging; (7) selecting Ultra-NanoCrystalline diamond or aluminum nitride dielectric materials and applying a bipolar driving voltage, stoppers, and a double-dielectric-layer structure; and (8) adopting gold alloying with carbon nanotubes (CNTs), hermetic and reliable packaging, and mN-level contact. |
| first_indexed | 2024-04-12T04:23:04Z |
| format | Article |
| id | doaj.art-3c9aa4bcad45455686a14178b5af244d |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-04-12T04:23:04Z |
| publishDate | 2018-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-3c9aa4bcad45455686a14178b5af244d2022-12-22T03:48:10ZengMDPI AGMicromachines2072-666X2018-04-019418510.3390/mi9040185mi9040185Research and Analysis of MEMS Switches in Different Frequency BandsWenchao Tian0Ping Li1LinXiao Yuan2School of Electro-Mechanical Engineering, Xidian University, Number 2 Taibai South Road, Xi’an 710071, ChinaSchool of Electro-Mechanical Engineering, Xidian University, Number 2 Taibai South Road, Xi’an 710071, ChinaSchool of Electro-Mechanical Engineering, Xidian University, Number 2 Taibai South Road, Xi’an 710071, ChinaDue to their high isolation, low insertion loss, high linearity, and low power consumption, microelectromechanical systems (MEMS) switches have drawn much attention from researchers in recent years. In this paper, we introduce the research status of MEMS switches in different bands and several reliability issues, such as dielectric charging, contact failure, and temperature instability. In this paper, some of the following methods to improve the performance of MEMS switches in high frequency are summarized: (1) utilizing combinations of several switches in series; (2) covering a float metal layer on the dielectric layer; (3) using dielectric layer materials with high dielectric constants and conductor materials with low resistance; (4) developing MEMS switches using T-match and π-match; (5) designing MEMS switches based on bipolar complementary metal–oxide–semiconductor (BiCMOS) technology and reconfigurable MEMS’ surfaces; (6) employing thermal compensation structures, circularly symmetric structures, thermal buckle-beam actuators, molybdenum membrane, and thin-film packaging; (7) selecting Ultra-NanoCrystalline diamond or aluminum nitride dielectric materials and applying a bipolar driving voltage, stoppers, and a double-dielectric-layer structure; and (8) adopting gold alloying with carbon nanotubes (CNTs), hermetic and reliable packaging, and mN-level contact.http://www.mdpi.com/2072-666X/9/4/185microelectromechanical systems (MEMS) switchisolationinsertion lossdielectric chargingcontact failuretemperature-stable |
| spellingShingle | Wenchao Tian Ping Li LinXiao Yuan Research and Analysis of MEMS Switches in Different Frequency Bands Micromachines microelectromechanical systems (MEMS) switch isolation insertion loss dielectric charging contact failure temperature-stable |
| title | Research and Analysis of MEMS Switches in Different Frequency Bands |
| title_full | Research and Analysis of MEMS Switches in Different Frequency Bands |
| title_fullStr | Research and Analysis of MEMS Switches in Different Frequency Bands |
| title_full_unstemmed | Research and Analysis of MEMS Switches in Different Frequency Bands |
| title_short | Research and Analysis of MEMS Switches in Different Frequency Bands |
| title_sort | research and analysis of mems switches in different frequency bands |
| topic | microelectromechanical systems (MEMS) switch isolation insertion loss dielectric charging contact failure temperature-stable |
| url | http://www.mdpi.com/2072-666X/9/4/185 |
| work_keys_str_mv | AT wenchaotian researchandanalysisofmemsswitchesindifferentfrequencybands AT pingli researchandanalysisofmemsswitchesindifferentfrequencybands AT linxiaoyuan researchandanalysisofmemsswitchesindifferentfrequencybands |