Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2
2D semiconducting transition metal dichalcogenides (TMDs) are considered promising building blocks for emergent electronic and optoelectronic devices. As one of the representatives of 2D semiconductors, monolayer MoSe2 has excellent electrical and optical properties and has attracted a lot of resear...
| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2022-11-01
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| Series: | Small Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/smsc.202200062 |
| _version_ | 1798022570686021632 |
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| author | Jiawei Li Shuopei Wang Lu Li Zheng Wei Qinqin Wang Huacong Sun Jinpeng Tian Yutuo Guo Jieying Liu Hua Yu Na Li Gen Long Xuedong Bai Wei Yang Rong Yang Dongxia Shi Guangyu Zhang |
| author_facet | Jiawei Li Shuopei Wang Lu Li Zheng Wei Qinqin Wang Huacong Sun Jinpeng Tian Yutuo Guo Jieying Liu Hua Yu Na Li Gen Long Xuedong Bai Wei Yang Rong Yang Dongxia Shi Guangyu Zhang |
| author_sort | Jiawei Li |
| collection | DOAJ |
| description | 2D semiconducting transition metal dichalcogenides (TMDs) are considered promising building blocks for emergent electronic and optoelectronic devices. As one of the representatives of 2D semiconductors, monolayer MoSe2 has excellent electrical and optical properties and has attracted a lot of research interest recently. To realize various device applications, large‐scale synthesis of monolayer MoSe2 with high crystal quality is critical, yet remains challenging. Herein, the growth of monolayer MoSe2 at a 4 inch wafer‐scale by chemical vapor deposition is demonstrated. Based on a multisource design and vertical placement of substrates, wafer‐scale continuity and uniformity of layer thickness, e.g., the monolayer, are achieved. This growth technique is also applicable to the wafer‐scale growth of other 2D semiconductors such as WS2 and MoS2. |
| first_indexed | 2024-04-11T17:32:05Z |
| format | Article |
| id | doaj.art-3c9cf20805934a03aaae5f702a134cf3 |
| institution | Directory Open Access Journal |
| issn | 2688-4046 |
| language | English |
| last_indexed | 2024-04-11T17:32:05Z |
| publishDate | 2022-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Science |
| spelling | doaj.art-3c9cf20805934a03aaae5f702a134cf32022-12-22T04:11:58ZengWiley-VCHSmall Science2688-40462022-11-01211n/an/a10.1002/smsc.202200062Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2Jiawei Li0Shuopei Wang1Lu Li2Zheng Wei3Qinqin Wang4Huacong Sun5Jinpeng Tian6Yutuo Guo7Jieying Liu8Hua Yu9Na Li10Gen Long11Xuedong Bai12Wei Yang13Rong Yang14Dongxia Shi15Guangyu Zhang16Songshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523808 China2D semiconducting transition metal dichalcogenides (TMDs) are considered promising building blocks for emergent electronic and optoelectronic devices. As one of the representatives of 2D semiconductors, monolayer MoSe2 has excellent electrical and optical properties and has attracted a lot of research interest recently. To realize various device applications, large‐scale synthesis of monolayer MoSe2 with high crystal quality is critical, yet remains challenging. Herein, the growth of monolayer MoSe2 at a 4 inch wafer‐scale by chemical vapor deposition is demonstrated. Based on a multisource design and vertical placement of substrates, wafer‐scale continuity and uniformity of layer thickness, e.g., the monolayer, are achieved. This growth technique is also applicable to the wafer‐scale growth of other 2D semiconductors such as WS2 and MoS2.https://doi.org/10.1002/smsc.202200062chemical vapor depositionfield-effect transistorsmonolayer MoSe2transition metal dichalcogenideswafer-scale monolayers |
| spellingShingle | Jiawei Li Shuopei Wang Lu Li Zheng Wei Qinqin Wang Huacong Sun Jinpeng Tian Yutuo Guo Jieying Liu Hua Yu Na Li Gen Long Xuedong Bai Wei Yang Rong Yang Dongxia Shi Guangyu Zhang Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2 Small Science chemical vapor deposition field-effect transistors monolayer MoSe2 transition metal dichalcogenides wafer-scale monolayers |
| title | Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2 |
| title_full | Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2 |
| title_fullStr | Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2 |
| title_full_unstemmed | Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2 |
| title_short | Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2 |
| title_sort | chemical vapor deposition of 4 inch wafer scale monolayer mose2 |
| topic | chemical vapor deposition field-effect transistors monolayer MoSe2 transition metal dichalcogenides wafer-scale monolayers |
| url | https://doi.org/10.1002/smsc.202200062 |
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