Microwave a.c. conductivity of domain walls in ferroelectric thin films

Conducting charged ferroelectric domain walls, as potential building blocks for future electronic devices, are unstable and uncommon in ferroelectric materials. Here, Tselev et al. show that neutral insulating domain walls in PbZrO3 and BiFeO3thin films are conductive under microwave excitation, all...

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Main Authors: Alexander Tselev, Pu Yu, Ye Cao, Liv R. Dedon, Lane W. Martin, Sergei V. Kalinin, Petro Maksymovych
Format: Article
Language:English
Published: Nature Portfolio 2016-05-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms11630
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author Alexander Tselev
Pu Yu
Ye Cao
Liv R. Dedon
Lane W. Martin
Sergei V. Kalinin
Petro Maksymovych
author_facet Alexander Tselev
Pu Yu
Ye Cao
Liv R. Dedon
Lane W. Martin
Sergei V. Kalinin
Petro Maksymovych
author_sort Alexander Tselev
collection DOAJ
description Conducting charged ferroelectric domain walls, as potential building blocks for future electronic devices, are unstable and uncommon in ferroelectric materials. Here, Tselev et al. show that neutral insulating domain walls in PbZrO3 and BiFeO3thin films are conductive under microwave excitation, allowing for non-destructive read-out.
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spelling doaj.art-3c9f4c9dd6324dfcbe031e6cd82fca6d2022-12-21T20:38:49ZengNature PortfolioNature Communications2041-17232016-05-01711910.1038/ncomms11630Microwave a.c. conductivity of domain walls in ferroelectric thin filmsAlexander Tselev0Pu Yu1Ye Cao2Liv R. Dedon3Lane W. Martin4Sergei V. Kalinin5Petro Maksymovych6Center for Nanophase Materials Sciences, Oak Ridge National LaboratoryDepartment of Physics and Collaborative Innovation Center for Quantum Matter, State Key Laboratory for Low-Dimensional Quantum Physics, Tsinghua UniversityCenter for Nanophase Materials Sciences, Oak Ridge National LaboratoryDepartment of Materials Science and Engineering and Department of Physics, University of California, BerkeleyDepartment of Materials Science and Engineering and Department of Physics, University of California, BerkeleyCenter for Nanophase Materials Sciences, Oak Ridge National LaboratoryCenter for Nanophase Materials Sciences, Oak Ridge National LaboratoryConducting charged ferroelectric domain walls, as potential building blocks for future electronic devices, are unstable and uncommon in ferroelectric materials. Here, Tselev et al. show that neutral insulating domain walls in PbZrO3 and BiFeO3thin films are conductive under microwave excitation, allowing for non-destructive read-out.https://doi.org/10.1038/ncomms11630
spellingShingle Alexander Tselev
Pu Yu
Ye Cao
Liv R. Dedon
Lane W. Martin
Sergei V. Kalinin
Petro Maksymovych
Microwave a.c. conductivity of domain walls in ferroelectric thin films
Nature Communications
title Microwave a.c. conductivity of domain walls in ferroelectric thin films
title_full Microwave a.c. conductivity of domain walls in ferroelectric thin films
title_fullStr Microwave a.c. conductivity of domain walls in ferroelectric thin films
title_full_unstemmed Microwave a.c. conductivity of domain walls in ferroelectric thin films
title_short Microwave a.c. conductivity of domain walls in ferroelectric thin films
title_sort microwave a c conductivity of domain walls in ferroelectric thin films
url https://doi.org/10.1038/ncomms11630
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