Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters
In this paper, a novel outphasing power amplifier (PA) based on class-E amplifiers with shunt capacitances and shunt filters is proposed. The new design provides high drain efficiency for both peak and back-off power levels. A mathematical model for the class-E power amplifier with shunt capacitance...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9261339/ |
| _version_ | 1818853459923828736 |
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| author | Pavel Afanasyev Andrei Grebennikov Ronan Farrell John Dooley |
| author_facet | Pavel Afanasyev Andrei Grebennikov Ronan Farrell John Dooley |
| author_sort | Pavel Afanasyev |
| collection | DOAJ |
| description | In this paper, a novel outphasing power amplifier (PA) based on class-E amplifiers with shunt capacitances and shunt filters is proposed. The new design provides high drain efficiency for both peak and back-off power levels. A mathematical model for the class-E power amplifier with shunt capacitance and shunt filter is presented. The proposed model enables derivation of load circuit parameters that provide optimum drain efficiency for the peak and back-off power levels using closed form mathematical expressions. Based on this model, an outphasing power amplifier is designed and subsequently implemented using microstrip transmission lines and a GaN HEMT devices. The fabricated power amplifier prototype is optimized for 2.14 GHz and provides drain efficiency of over 60% for back-off power levels up to 8.5 dB. The amplifier demonstrates a 44.3% drain efficiency for 64QAM OFDM modulated signal with 20 MHz bandwidth. Adjacent channel leakage ratio (ACLR) of -39.5 dB and error vector magnitude (EVM) of 0.9 % were achieved after the application of a memory polynomial linearization algorithm. |
| first_indexed | 2024-12-19T07:37:10Z |
| format | Article |
| id | doaj.art-3ca63c607f7040ce8d93a45bf5db61bb |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-19T07:37:10Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-3ca63c607f7040ce8d93a45bf5db61bb2022-12-21T20:30:33ZengIEEEIEEE Access2169-35362020-01-01820887920889110.1109/ACCESS.2020.30385849261339Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt FiltersPavel Afanasyev0https://orcid.org/0000-0002-3511-8143Andrei Grebennikov1https://orcid.org/0000-0003-2636-7049Ronan Farrell2John Dooley3https://orcid.org/0000-0002-2638-2399Department of Electronic Engineering, National University of Ireland, Maynooth, IrelandSumitomo Electric Europe Ltd., Elstree, U.K.Department of Electronic Engineering, National University of Ireland, Maynooth, IrelandDepartment of Electronic Engineering, National University of Ireland, Maynooth, IrelandIn this paper, a novel outphasing power amplifier (PA) based on class-E amplifiers with shunt capacitances and shunt filters is proposed. The new design provides high drain efficiency for both peak and back-off power levels. A mathematical model for the class-E power amplifier with shunt capacitance and shunt filter is presented. The proposed model enables derivation of load circuit parameters that provide optimum drain efficiency for the peak and back-off power levels using closed form mathematical expressions. Based on this model, an outphasing power amplifier is designed and subsequently implemented using microstrip transmission lines and a GaN HEMT devices. The fabricated power amplifier prototype is optimized for 2.14 GHz and provides drain efficiency of over 60% for back-off power levels up to 8.5 dB. The amplifier demonstrates a 44.3% drain efficiency for 64QAM OFDM modulated signal with 20 MHz bandwidth. Adjacent channel leakage ratio (ACLR) of -39.5 dB and error vector magnitude (EVM) of 0.9 % were achieved after the application of a memory polynomial linearization algorithm.https://ieeexplore.ieee.org/document/9261339/Class EGaN HEMTload modulationmicrowave amplifiersoutphasing amplifier |
| spellingShingle | Pavel Afanasyev Andrei Grebennikov Ronan Farrell John Dooley Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters IEEE Access Class E GaN HEMT load modulation microwave amplifiers outphasing amplifier |
| title | Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters |
| title_full | Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters |
| title_fullStr | Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters |
| title_full_unstemmed | Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters |
| title_short | Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters |
| title_sort | analysis and design of outphasing transmitter using class e power amplifiers with shunt capacitances and shunt filters |
| topic | Class E GaN HEMT load modulation microwave amplifiers outphasing amplifier |
| url | https://ieeexplore.ieee.org/document/9261339/ |
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